Ohmic contacts for room-temperature AlGaAs/GaAs quantum cascade lasers (QCL)

• Autorzy: Baranska A , Szerling A , Karbownik P , Hejduk K , Bugajski M , Laszcz A , Golaszewska-Malec K , Filipowski W
• Języki publikacji: EN

Abstrakty

EN

This paper reports on the results of optimization of the ohmic contacts for GaAs/AlGaAs quantum cascade lasers (QCLs). Technological parameters during the optimization procedure concerned time and temperature of thermal processing as also the ratio of metallic layers thickness. The main goal of this work was to obtain stable ohmic contacts with low resistance and a smooth surface. Circular transmission line method (CTLM) was applied for the electrical characterization of the Ni/AuGe/Ni/Au and AuGe/Ni/Au metallization systems. Transmission electron microscopy (TEM) method was used for the characterization of microstructures. Elements concentration in layers was determined by the energy dispersive X-ray spectroscopy (EDXS). The best results for the specific contacts resistivity, thermal stability and morphology were obtained when the Ni/AuGe/Ni/Au and the AuGe/Ni/Au systems were processed at 440 °C and 400 °C, respectively.

Słowa kluczowe

EN

ohmic contacts; n-GaAs; CTLM; EDXS; TEM

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 5--15
• Opis fizyczny: Bibliogr. 10 poz., rys., tab.

Twórcy

autor

Baranska A

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Szerling A

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland
• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Karbownik P

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Hejduk K

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Bugajski M

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Laszcz A

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Golaszewska-Malec K

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Filipowski W

• Silesian University of Technology, Faculty of Automatic Control, Electronics and Computer Science, Institute of Electronics, ul. Akademicka 16, 44-100 Gliwice, Poland

Bibliografia

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