Synthesis and Characterization of Antimony Telluride for Thermoelectric and Optoelectronic Applications

• Autorzy: Zybała R. , Mars K. , Mikuła A. , Bogusławski J. , Soboń G. , Sotor J. , Schmidt M. , Kaszyca K. , Chmielewski M. , Ciupiński L. , Pietrzak K.

Identyfikatory

DOI

10.1515/amm-2017-0155

• Języki publikacji: EN

Abstrakty

EN

Antimony telluride (Sb₂ Te₃ ) is an intermetallic compound crystallizing in a hexagonal lattice with R-3m space group. It creates a c lose packed structure of an ABCABC type. As intrinsic semiconductor characterized by excellent electrical properties, Sb₂ Te₃ is widely used as a low-temperature thermoelectric material. At the same time, due to unusual properties (strictly connected with the structure), antimony telluride exhibits nonlinear optical properties, including saturable absorption. Nanostructurization, elemental doping and possibilities of synthesis Sb₂ Te₃ in various forms (polycrystalline, single crystal or thin film) are the most promising methods for improving thermoelectric properties of Sb2Te3.Applications of Sb₂ Te₃ in optical devices (e.g. nonlinear modulator, in particular saturable absorbers for ultrafast lasers) are also interesting. The antimony telluride in form of bulk polycrystals and layers for thermoelectric and optoelectronic applications respectively were used. For optical applications thin layers of the material were formed and studied. Synthesis and structural characterization of Sb₂ Te₃ were also presented here. The anisotropy (packed structure) and its influence on thermoelectric properties have been performed. Furthermore, preparation and characterization of Sb₂ Te₃ thin films for optical uses have been also made.

Słowa kluczowe

EN

antimony telluride; thermoelectric materials; thin films; PVD magnetron sputtering; topological insulator

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2017
• Tom: Vol. 62, iss. 2B
• Strony: 1067--1070
• Opis fizyczny: Bibliogr. 18 poz., rys.

Twórcy

autor

Zybała R.

• Warsaw University of Technology, Faculty of Materials Science and Engineering, 141 Woloska, Warsaw 02-507, Poland

autor

Mars K.

• AGH University of Science and Technology, Al. A. Mickiewicza 30, 30-059 Kraków, Poland

autor

Mikuła A.

• AGH University of Science and Technology, Al. A. Mickiewicza 30, 30-059 Kraków, Poland

autor

Bogusławski J.

• Wroclaw University of Science and Technology, Faculty of Electronics, Wroclaw, Poland

autor

Soboń G.

• Wroclaw University of Science and Technology, Faculty of Electronics, Wroclaw, Poland

autor

Sotor J.

• Wroclaw University of Science and Technology, Faculty of Electronics, Wroclaw, Poland

autor

Schmidt M.

• Institute of Electronic Materials Technology, Warsaw, Poland

autor

Kaszyca K.

• Institute of Electronic Materials Technology, Warsaw, Poland

autor

Chmielewski M.

• Institute of Electronic Materials Technology, Warsaw, Poland

autor

Ciupiński L.

• Warsaw University of Technology, Faculty of Materials Science and Engineering, 141 Woloska, Warsaw 02-507, Poland

autor

Pietrzak K.

• Institute of Electronic Materials Technology, Warsaw, Poland

Bibliografia

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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)