Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films

• Autorzy: Maheswari B. , Dhanam M.
• Języki publikacji: EN

Abstrakty

EN

CuInS2 (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.

Słowa kluczowe

EN

CuInS2; SILAR; XRD; EDAX; UV-spectrophotometer

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2013
• Tom: Vol. 31, No. 2
• Strony: 193--200
• Opis fizyczny: Bibliogr. 34 poz., tab., wykr.

Twórcy

autor

Maheswari B.

• Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamil Nadu, India

autor

Dhanam M.

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