Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics

• Autorzy: Bogaczewicz Rafał Antoni , Popko Ewa , Gwóźdź Katarzyna Renata

Identyfikatory

DOI

10.37190/oa210111

• Języki publikacji: EN

Abstrakty

EN

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.

Słowa kluczowe

EN

simulation; semiconductor; heterojunction; band diagram; n-ZnO/p-Si

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2021
• Tom: Vol. 51, nr 1
• Strony: 135--145
• Opis fizyczny: Bibliogr. 15 poz., rys., tab.

Twórcy

autor

Bogaczewicz Rafał Antoni

• Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Popko Ewa

• Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology, Chair of Quantum Technologies, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

autor

Gwóźdź Katarzyna Renata

• Wrocław University of Science and Technology, Faculty of Fundamental Problems of Technology, Chair of Quantum Technologies, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Bibliografia

• [1] https://www.nrel.gov/pv/assets/pdfs/best-research-cell-efficiencies.20190802.pdf, (accessed June 29,2020).
• [2] DESCOEUDRES A., HOLMAN Z.C., BARRAUD L., MOREL S., DE WOLF S., BALLIF C., >21% efficient silicon heterojunction solar cells on n- and p-type wafers compared, IEEE Journal of Photovoltaics 3(1), 2013, pp. 83–89, DOI:10.1109/JPHOTOV.2012.2209407.
• [3] HUSAIN B., Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer, PhD Dissertation, Charlotte, 2017, available on https://coefs.uncc.edu/yzhang47/files/2018/08/Hussain-DissertationFormatted-1.pdf, (accessed June 29, 2020).
• [4] ELLMER K., KLEIN A., RECH B., Transparent Conductive Zinc Oxide: Basics and Applications in Thin Film Solar Cells, Springer, New York/Berloin/Heidelberg, 2007.
• [5] NEUMARK G. F., KUSKOVSKY I. L., JIANG H., Optical properties of ZnO alloys, [In] Wide Bandgap Light Emitting Materials And Devices, [Ed.] Neumark G.F., Kuskovsky I.L., Jiang H., Wiley-VCH, Weinheim, 2007, p. 195.
• [6] LEE J.-H., KO K.-H., PARK B.-O., Electrical and optical properties of ZnO transparent conducting films by the sol–gel method, Journal of Crystal Growth 247(1–2), 2003, pp. 119–125, DOI:10.1016/S0022-0248(02)01907-3.
• [7] HIRAMITSU T., FURUTA M., FURUTA H., MATSUDA T., HIRAO T., Influence of thermal annealing on microstructures of zinc oxide films deposited by RF magnetron sputtering, Japanese Journal of Applied Physics 46(6R), 2007, pp. 3319–3323, DOI:10.1143/JJAP.46.3319.
• [8] GUZIEWICZ E., KOWALIK I. A., GODLEWSKI M., KOPALKO K., OSINNIY V., WOJCIK A., YATSUNENKO S., LUSAKOWSKA E., PASZKOWICZ W., GUZIEWICZ M., Extremely low temperature growth of ZnO by atomic layer deposition, Journal of Applied Physics 103(3), 2008, article 033515, DOI:10.1063/1.2836819.
• [9] HUANG J.S., LIN C.F., Influences of ZnO sol-gel thin film characteristics on ZnO nanowire arrays prepared at low temperature using all solution-based processing, Journal of Applied Physics 103(1), 2008, article 014304, DOI:10.1063/1.2828172.
• [10] LIN H., ZHOU S., ZHOU J., LIU X., GU S., ZHU S., XIE Z., HAN P., ZHANG E., Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition, Thin Solid Films, 516(18), 2008, pp. 6079–6082, DOI:10.1016/j.tsf.2007.10.128.
• [11] http://www.ampsmodeling.org, (accessed February 29, 2020).
• [12] https://ecee.colorado.edu/~bart/book/book/chapter4/ch4_3.htm, (accessed February 29, 2020).
• [13] https://www.azom.com/article.aspx?ArticleID=8417#4, (accessed February 29, 2020).
• [14] NAWAZ M., MARSTEIN E.S. HOLT A., Design analysis of ZnO/cSi heterojunction solar cell, Proceedings of the 2010 35th IEEE Photovoltaic Specialists Conference, 2010, Honolulu, USA, 002213, DOI:10.1109/PVSC.2010.5616070.
• [15] BOGACZEWICZ R., Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics, BSc Thesis, 2017, Wrocław, (not published).

Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).