Design and analysis of corner scatter inclusion in photonic crystal-based ring resonator

• Autorzy: Vadukanathan Anusooya , Suyambrakasam Gobalakrishnan , Sivaraj Ponmalar , Kasiviswanathan Manikandan Moola Seetharamaier

Identyfikatory

DOI

10.37190/oa240202

• Języki publikacji: EN

Abstrakty

EN

One of the significant challenges in integrated optical systems is achieving miniaturization. Traditional components can limit the effective utilization of chip area. Devices with distinctive thickness and length characteristics, including the Mach Zehnder interferometer (MZI), the directional coupler, and waveguides, contribute to this issue, limiting the efficient use of chip area. Photonic crystals offer a solution to this problem. The proposed design results in two optical bandgap ranges, from 0.456586 to 0.675819 μm^–1 and from 1.12855 to 1.16338 μm^–1, both in TE mode with gap widths of 0.219233 and 0.34826 μm^–1, respectively. The corresponding wavelength ranges are from 1479 to 2190 nm and 859 to 886 nm. The analysis of field propagation in the photonic crystal ring resonator (PCRR) is carried out using the finite-difference time domain (FDTD) method, while the bandgap analysis is performed by the plane wave expansion (PWE) method. This work primarily focuses on the incorporation of corner scatters in the PCRR. Corner scatters play a crucial role in guiding the field smoothly inside the ring, thus preventing the localization of light within the structure. After the simulation, various attributes were compared for both structures. At a resonant wavelength of 1550 nm, the input intensity is measured as 0.0591 a.u., and the output intensities for with and without corner scatter are 0.0458 and 0.0539 a.u., respectively.

Słowa kluczowe

EN

photonic crystal ring resonator; corner scatter; FDTD; photonic bandgap; plane wave expansion

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2024
• Tom: Vol. 54, nr 2
• Strony: 135--147
• Opis fizyczny: Bibliogr. 33 poz., rys.

Twórcy

autor

Vadukanathan Anusooya

• Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Kattankulathur, Chengalpattu District, Chennai, Tamil Nadu 603203, India

autor

Suyambrakasam Gobalakrishnan

• Department of Humanities and Science (Physics), Rajalakshmi Engineering College, Rajalakshmi Nagar, Thandalam, Kanchipuram District, Tamil Nadu 602105, India

autor

Sivaraj Ponmalar

• Department of Computer Science and Engineering, Velammal College of Engineering and Technology, Viraganoor, Madurai, Tamilnadu 625009, India

autor

Kasiviswanathan Manikandan Moola Seetharamaier

• Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai, Tamilnadu 625015, India

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