Analysis in Commutation of a New High Voltage Thyristor Structure for High Temperature

• Autorzy: Toulon G. , Bourennane A , Isoird K
• Języki publikacji: EN

Abstrakty

EN

In this paper, a high voltage thyristor structure using Schottky contacts on the anode side is analysed through 2D physical simulations in terms of switching performance. The replacement of the P emitter of a conventional symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward direction and hence improves the forward blocking voltage at high temperature while maintaining its reverse blocking capability. It is shown by comparing this structure with a conventional thyristor, that the presence of Schottky contact does not degrade the turn-on process. It is also shown that the presence of Schottky contact reduces the device turn-off time, improving the maximum operating frequency of the device.

Słowa kluczowe

EN

pulsed power; high voltage thyristor; TCAD simulations; high temperature; Schottky contacts

PL

zasilanie impulsowe; tyrystor wysokonapięciowy; symulacja TCAD; temperatura wysoka; styk Schottky’ego

• Wydawca: Lodz University of Technology. Department of Microelectronics and Computer Science
• Czasopismo: International Journal of Microelectronics and Computer Science
• Rocznik: 2013
• Tom: Vol. 4, nr 2
• Strony: 49--54
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Toulon G.

• CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
• Université de Toulouse, LAAS, F-31400 Toulouse, France

autor

Bourennane A

• CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
• Université de Toulouse, UPS, LAAS, F-31400 Toulouse, France

autor

Isoird K

• CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
• Université de Toulouse, UPS, LAAS, F-31400 Toulouse, France

Bibliografia

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