Department of Characterisation of Nanoelectronic Structures

• Autorzy: Przewłocki H. M.
• Języki publikacji: EN

Słowa kluczowe

EN

Institute of Electron Technology; scientific activity

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

• Wydawca: Instytut Technologii Elektronowej
• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2013
• Tom: z. 1/2
• Strony: 166--187
• Opis fizyczny: Bibliogr. 36 poz., wykr.

Twórcy

autor

Przewłocki H. M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• Publications’2012
• [P1] Borowicz P., Adamus Z., Ekielski М., Piotrowska A., Kuchuk A., Borysiewicz М., Kamińska E., Latek М.: Structural Investigation of Carbonic Layers in Ohmic Contacts - Comparison of Raman Spectra Measured with Irradiation through the Silicide Layer and Silicon Carbide Substrate. Elektronika 2012 vol. LIII no. 9 p. 31-34 (in Polish).
• [P2] Borowicz P., Adamus Z., Ekielski М., Piotrowska A., Kuchuk A., Borysiewicz М., Kamińska E., Latek М.: Structural Investigation of Carbonic Layers in Ohmic Contacts - Comparison of Raman Spectra Measured with Irradiation through the Silicide Layer and Silicon Carbide Substrate. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 580-585 (in Polish).
• [P3] Borowicz P., Gutt Т., Małachowski Т., Latek М.: Visible and Deep Ultraviolet Study of SiC/SiO2 Interface. Mat. Sci. Forum 2012 vol. 711 p. 118-123 (in Polish).
• [P4] Borowicz P., Kuchuk A., Adamus Z., Borysiewicz М., Ekielski М., Kamińska E., Piotrowska A., Latek М.: Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide. ISRN Nanomaterials 2012 vol. 2012 s. 1-11, ID 852405
• [P5] Borowicz P., Latek М., Rzodkiewicz W., Łaszcz A., Czerwiński A., Ratajczak J.: Deep - Ultraviolet Raman Investigation of Silicon Oxide: Thin Film on Silicon Substrate Versus Bulk Material. Advanc. in Natural Sci.: Nanosci. a. Nanotechnol. 2012 vol. 3 p. 045003
• [P6] Borowicz P., Nickel B.: The Kinetics of Joined Action of Triplet-Triplet Annihilation and First-Order Decay of Molecules in the T, State in the Case of Nondominant First-Order Process. ISRN Spectroscopy 2012 vol. 2012 p. 1-13.
• [P7] Gutt Т., Piskorski K., Przewłocki Н. М., Borowicz P.: Investigation of MOS Sic Structures Prepared According to Specific Technological and Design Solution Elektronika 2012 vol. LIII no. 9 p. 44-46.
• [P8] Gutt Т., Piskorski K., Przewłocki H. M., Borowicz P.: Investigation of MOS Sic Structures Prepared According to Specific Technological and Design Solution. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 566-569 (in Polish).
• [P9] Mitrovic I. Z., Przewłocki H. М., Piskorski K., Simutis G., Dhanak V. R., Sedghi N., Hall S.: Effect of Oxygen on Tuning the TiNx Metal Gate Work Function on LaLuO3. Thin Solid Films 2012 vol. 520 p. 6959-6962.
• [P10] Papis-Polakowska E., Kaniewski J., Szade J., Rzodkiewicz W., Jasik A., Jureńczyk J., Orman Z., Wawro A.: Sulfide Passivation of GaSb-Based Superlattice Structures. Thin Solid Films (submit. to print).
• [P11] Papis-Polakowska E., Kaniewski J., Szade J., Rzodkiewicz W., Jasik A., Regiński K., Wawro A.: Study of Interfaces Chemistry in Type II GaSb/InAs Superlattices Structures. Phys. Proc. 2012 vol. 32 s. 184-190.
• [P12] Piskorski K., Przewłocki H. M., Esteve R., Bakowski М.: Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures. Mat. Sci. Forum 2012 vol. 711 p. 99-103.
• [P13] Piskorski K., Przewłocki H. М., Esteve R., Bakowski М.: Band Diagram Determination of MOS Structures with Different Gate Materials on 3C-SiC Substrate. Opto-Electron. Rev. 2012 vol. 20 no. 1 p. 26-33.
• [P14] Piskorski K., Przewłocki H. М., Esteve R., Bakowski М.: The Dependence of Some Electrical Parameters of MOS Structure Based on Sic Substrate on the Dimension of the Metal Gates. Elektronika 2012 vol. LIII no. 9 p. 48-51 (in Polish).
• [P15] Piskorski K., Przewłocki H. M., Esteve R., Bakowski М.: Distributions of Electric Parameters in MOS Structures on 3C-SiC Substrate. Centr. Europ. J. of Phys. 2012 (on line).
• [P16] Piskorski K., Przewłocki H. М., Esteve R., Bakowski М.: The Dependence of Some Electrical Parameters of MOS Structure Based on SiC Substrate on the Dimension of the Metal Gates. Proc. of the XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012, p. 600-605 (in Polish).
• [P17] Przewłocki H. М., Gutt Т., Piskorski K., Bakowski М.: Band Diagrams and Trap Distributions in Metal-SiO2-SiC(3C) Structures with Different Metal Gates. ECS Trans. 2012 vol. 50 no. 3 p. 231-242.
• Conferences’2012
• [C1] Borowicz P.: Carbonic Inclusions on SiC/SiO2 Interface. Sem. Institute of Physical Chemistry PAS. Warsaw, Poland, 25-25.04.2012 (inv. lect.).
• [C2] Borowicz P., Adamus Z., Ekielski М., Piotrowska A., Kuchuk A., Borysiewicz M., Kamińska E., Latek М.: Structural Investigation of Carbonic Layers in Ohmic Contacts - Comparison of Raman Spectra Measured with Irradiation through the Silicide Layer and Silicon Carbide Substrate. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
• [C3] Gluba Ł., Kulik М., Rzodkiewicz W., Żuk J., Kobzev A. P.: Effects of High Temperature Annealing on Optical Properties of Ions Implanted GaAs Near Surface Layers. IXth Int. Conf. on Ion Implantation a. Other Applications of Ions a. Electrons. Kazimierz Dolny, Poland, 25-28.06.2012 (paper).
• [C4] Gluba Ł., Yastrubchak O., Kulik М., Rzodkiewicz W., Żuk J., Sadowski J.: Ellipsometric Studies of E1 and E1+D1 Interband Transitions in (Ga,Mn)As Diluted Magnetic Semiconductor. 7th Workshop Ellipsometry. Leipzig, Germany, 5-7.03.2012 (poster).
• [C5] Gluba Ł., Yastrubchak O., Kulik М., Rzodkiewicz W., Sadowski J., Wosiński Т., Sęk G., Rudno-Rudziński W., Rawski М., Żuk J.: Optical Study of E1 and E1+D1 Interband Transitions in (Ga, Mn) Epitaxial Layers. 41st Jaszowiec Int. School a. Conf. on the Physics of Semiconductor. Krynica Zdrój, Poland, 8-15.06.2012 (poster).
• [C6] Gutt Т., Piskorski K, Przewłocki Н. М., Borowicz P.: Investigation of MOS Sic Structures Prepared According to Specific Technological and Design. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (paper, in Polish).
• [C7] Król K., Sochacki М., Turek М., Żuk J., Przewłocki Н. М., Gutt Т., Borowicz P., Guziewicz М., Szuber J., Kwoka М., Kościelniak P., Szmidt J.: Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure. The 9th Europ. Conf. on Silicon Carbide and Related Materials. St. Petersburg, Russia, 2-6.09.2012 (poster).
• [C8] Kulik М., Rzodkiewicz W., Gluba Ł., Mączka D., Kobzev A. P., Słowiński В.: Dielectric Function of Native Oxides on the Implanted GaAs. IXth Int. Conf. on Ion Implantation a. Other Applications of Ions a. Electrons. Kazimierz Dolny, Poland, 25-28.06.2012 (poster).
• [C9] Kulik М., Rzodkiewicz W., Żuk J., Kobzev A. P.: Spectroscopic Ellipsometry and Nuclear Methods Investigation of Native Oxide Layers on Al+ Hot-Implanted GaAs. 7th Workshop Ellipsometry. Leipzig, Germany, 5-7.03.2012 (poster).
• [C10] Kulik М., Rzodkiewicz W., Żuk J., Kobzev A. P., Mączka D.: The Spectra of Refraction and Extinction Indexes of Native Oxide Layers on Аl+ Hot Implanted GaAs-SE and RBS/NR Investigations IXth Int. Conf. on Ion Implantation a. Other Applications of Ions a. Electrons. Kazimierz Dolny, Poland, 25-28.06.2012 (paper).
• [C11] Piskorski K., Przewłocki H. М., Esteve R., Bakowski М.: The Dependence of Some Electrical Parameters of MOS Structure Based on SiC Substrate on the Dimension of the Metal Gates. XI Polish Conf. on Electronics. Darłówko Wschodnie, Poland, 11-14.06.2012 (poster, in Polish).
• [C12] Przewłocki H. М.: Extension of the Theory of Internal Photoemission and a Method to Determine the Photoelectron Escape Depth Form the Substrate of a MOS Structure. Workshop of the Institute of Physics, Maria Curie-Skłodowska University, Polish Physics Association. Lublin, Poland, 19.04.2012 (inv. lect., in Polish).
• [C13] Przewłocki H. М.: Photoemission Yield and the Escape Depth Determination in MOS Structures on N+ and P+ Silicon Substrates. IEEE EDS Distinguished Lecturers Mini-Colloq. Enschede, Holland, 21-22.06.2012 (inv. lect.).
• [C14] Przewłocki H. М., Gutt Т., Piskorski K., Bakowski М.: Band Diagrams and Trap Distributions in Metal-SiO2-SiC(3C) Structures with Different Metal Gates. 222 Meet. of the Electrochem. Soc. Honolulu, USA, 7-12.10.2012 (inv. lect., commun.).
• [C15] Rzodkiewicz W., Kulik М., Gutt Т., Latek М.: Ellipsometric and Raman Studies on Mechanical Stress in MOS Devices. 7th Workshop Ellipsometry. Lepzig, Germany, 5-7.03.2012 (poster).
• [C16] Rzodkiewicz W., Kulik М., Żuk J., Panas A., Kobzev A. P.: Nuclear and Optical Analyses of MOS Devices. IXth Int. Conf. on Ion Implantation a. Other Applications of Ions a. Electrons. Kazimierz Dolny, Poland, 25-28.06.2012 (paper).
• [C17] Smolarz A., Rzodkiewicz W., Kulik М., Żuk J.: Influence of Ion Implantation on Optical Properties of Native Oxide Films on GaAs. 7th Workshop Ellipsometry. Lepzig, Germany, 5-7.03.2012 (poster).
• [C18] Stanicki P., Rzodkiewicz W., Kulik М., Żuk J., Kobzev A. P.: Influence of Thermal Annealing on Optical Spectra of Subsurface GaAs Layers Implanted by Indium and Xenon Ions. 7th Workshop Ellipsometry. Lepzig, Germany, 5-7.03.2012 (poster).
• [C19] Wiczołek P., Rzodkiewicz W., Kulik М., Żuk J.: Application on FDS Method in Spectroscopic Ellipsometry Studies of Semiconductors with Direct and Indirect Band Gaps. 7th Workshop Ellipsometry. Leipzig, Germany, 5-7.03.2012 (poster).