Electrical Characteristics of Tin Oxide Films Grown by Thermal Atomic Layer Deposition

• Autorzy: Yoon Seong Yu , Choi Byung Joon

Identyfikatory

DOI

10.24425/amm.2020.133214

• Języki publikacji: EN

Abstrakty

EN

Tin dioxide (SnO₂ ) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO₂ films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino)tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO₂ films are grown on SiO₂ /Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO₂ films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO₂ film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.

Słowa kluczowe

EN

atomic layer deposition; tin oxide; electrical property; oxygen adsorption

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2020
• Tom: Vol. 65, iss. 3
• Strony: 1041--1044
• Opis fizyczny: Bibliogr. 12 poz., rys.

Twórcy

autor

Yoon Seong Yu

• Seoul National University of Science and Technology, Department of Material Science and Engineering 01811 Seoul, Korea

autor

Choi Byung Joon

• Seoul National University of Science and Technology, Department of Material Science and Engineering 01811 Seoul, Korea
• Seoul National University of Science and Technology, The Institute of Powder Technology, 01811 Seoul, Korea

Bibliografia

• [1] B. Orel, U. L. Stangar, K. Kalcher, J. Electrochem. Soc. 141, 127 (1994).
• [2] J. W. Leem, J. S. Yu, Mater. Sci. Eng. B 176, 1207 (2011).
• [3] B. Y. Wei, M. C. Hsu, P. G. Su, H. M. Lin, R. J. Wu, H. J. Lai, Sensors Actuators B 101, 81 (2004).
• [4] J.-W. Shin, S.-J. Choi, I.-K. Lee, D.-Y. Youn, C.-O. Park, J.-H. Lee, H. L. Tuller, I.-D. Kim, Adv. Funct. Mater. 23, 2357 (2013).
• [5] M. Habgood, N. Harrison, Surface Science 602, 1072 (2008).
• [6] U. Pulkkinen, T. T. Rantala, T. S. Rantala, V. Lantto, J. Molecular Catalysis A 166, 15 (2001).
• [7] G. Korotchenkov, V. Brynzari, S. Dmitriev, Sensors Actuators B 54, 197 (1999).
• [8] H. Kim, A. Pique, Appl. Phys. Lett. 84, 218 (2004).
• [9] J. Sundqvist, M. Ottosson, A. Harsta, Chem. Vap. Depos. 10, 77 (2004).
• [10] N. H. Lee, S. Y. Yoon, D. H. Kim, S. K. Kim, B. J. Choi, Electronic Materials Lett. 13, 318 (2017).
• [11] D. H. Kim, D.-Y. Shin, Y.-G. Lee, G.-H. An, J. H. Han, H.-J. Ahn, B. J. Choi, Ceram. Inter. 44, 19554 (2018).
• [12] D. Kim, D. H. Kim, D.-H. Riu, B. J. Choi, Arch. Metall. Mater. 63, 1061 (2018).

Uwagi

EN

1. This study was supported by the Advanced Research Project funded by SeoulTech (Seoul National University of Science and Technology).

PL

2. Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).