Silicon photomultiplier gain compensation algorithm in multidetector measurements

• Autorzy: Baszczyk M. , Dorosz P. , Głąb S. , Kucewicz W. , Mik Ł. , Sapor M.
• Języki publikacji: EN

Abstrakty

EN

The paper stresses the issue of strong temperature influence on the gain of a Silicon Photomultiplier (SiPM). High sensitivity of the detector to light (single photons) requires stable parameters during measurement, including gain. The paper presents a method of compensating the change of gain caused by temperature variations, by adjusting a suitable voltage bias provided by a precise power module. The methodology of the research takes in account applications with a large number of SiPMs (20 thousand), explains the challenges and presents the results of the gain stabilization algorithm.

Słowa kluczowe

EN

silicon photomultiplier; single photons; gain stabilization; temperature influence

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2013
• Tom: Vol. 20, nr 4
• Strony: 655--666
• Opis fizyczny: Bibliogr. 9 poz., rys., tab., wykr.

Twórcy

autor

Baszczyk M.

• AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow

autor

Dorosz P.

• AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow

autor

Głąb S.

• AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow

autor

Kucewicz W.

• AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow

autor

Mik Ł.

• AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow

autor

Sapor M.

• AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, Al. Mickiewicza 30, 30-059 Krakow

Bibliografia

• [1] Golovin, V., et al. (2004). Novel type of avalanche photodetector with Geiger mode operation. Nucl. Instrum. Meth. A, (518), 560-564.
• [2] van Dam, H., et al. (2010). A comprehensive model of the response of Silicon Photomultiplier. IEEE Transactions on Nuclear Science, vol.57(4), 2254-2266.
• [3] Beznosko, D. (2009). Novel multi-pixel silicon photon detectors and applications in T2K. Proceedings of the DPF-2009 Conference. Detroit, USA, http://arxiv.org/abs/0910.4429.
• [4] Sze, S. M. (1969). Physics of Semiconductor Devices. New York: John Wiley & Sons, Inc.
• [5] Wolf, H. (1971). Semiconductors. New York: John Wiley & Sons, Inc.
• [6] Dorosz, P., Kucewicz, W., et al. (2011). Four Channel Data Acquisition System for Silicon Photomultipliers. Elektronika : konstrukcje, technologie, zastosowania, R.52(12), 28-31.
• [7] Ramilli, M. (2008). Characterization of SiPM: Temperature dependencies. Nuclear Science Symposium Conference Record NSS ’08. Dresden, Germany, 10.1109/NSSMIC.2008.4774854, 2467-2470.
• [8] Dinu, N., et al. (2010). Temperature and bias voltage dependence of the MPPC detector. Nuclear Science Symposium Conference Record NSS ’10. Knoxville, USA, 10.1109/NSSMIC.2010.5873750, 215-219.
• [9] Dorosz, P., Baszczyk, M. (2012). Thermal Stabilization of Silicon Photomultiplier measurement system for IFR. Instrumentation for Muon and K0L Identification at Super Flavor Factories, Cracow, Poland, https://agenda.infn.it/conferenceDisplay.py?ovw=True&confId=5123.

Uwagi

EN

This work has been partially supported by statutory activity (11.11.230.017).