Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

• Autorzy: Shafa M. , Wang Z. , Naz M. Y. , Akbar S. , Farooq M. U. , Ghaffa A.

Identyfikatory

DOI

10.1515/msp-2016-0084

• Języki publikacji: EN

Abstrakty

EN

Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD) of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

Słowa kluczowe

EN

vapor solid growth; photodetectors; antimony thin film; rhombohedral mica

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 3
• Strony: 591--596
• Opis fizyczny: Bibliogr. 19 poz., rys., tab.

Twórcy

autor

Shafa M.

• Institute of Fundamental and Frontier Sciences, University of Electronics Science and Technology of China, 610054 Chengdu, China

autor

Wang Z.

• Institute of Fundamental and Frontier Sciences, University of Electronics Science and Technology of China, 610054 Chengdu, China
• State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China

autor

Naz M. Y.

• Department of Mechanical Engineering, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak, Malaysia
• Department of Physics, University of Agriculture, 38040-Faisalabad, Pakistan

autor

Akbar S.

• Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands

autor

Farooq M. U.

• Institute of Fundamental and Frontier Sciences, University of Electronics Science and Technology of China, 610054 Chengdu, China

autor

Ghaffa A.

• Department of Physics, University of Agriculture, 38040-Faisalabad, Pakistan

Bibliografia

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.