Experimental study of snubber circuit design for SiC power MOSFET devices

• Autorzy: Niewiara Ł. J. , Skiwski M. , Tarczewski T. , Grzesiak L. M.
• Języki publikacji: EN

Abstrakty

EN

In this paper a design process of snubber circuit for DC\DC converter is presented. Computer simulation and experimental tests were carried out. Due to the presence of parasitic LC (inductance and capacitance) circuit in the power stage, it is necessary to use an additional snubber circuit for voltage overshoot and oscillations reduction. A simulation model of the converter with parasitic circuit was designed. Six topologies of snubber circuits (C, single C, RC, single RC, RCD, single RCD) were investigated in simulation tests. Simulation model of the proposed system has been investigated in Matlab/Simulink/PLECS environment. Input signal parameters like voltage overshoot, rise time, fall time were compared for considered snubber circuits. Experimental tests were carried out for the best simulation results. It confirm the proper choice of snubber circuit.

Słowa kluczowe

EN

DC\DC converter; snubber circuit; SiC MOSFET

• Wydawca: Wydawnictwo Politechniki Poznańskiej
• Czasopismo: Computer Applications in Electrical Engineering
• Rocznik: 2015
• Tom: Vol. 13
• Strony: 120--131
• Opis fizyczny: Bibliogr. 8 poz., rys., tab.

Twórcy

autor

Niewiara Ł. J.

• Nicolaus Copernicus University 87-100 Toruń, ul. Grudziądzka 5

autor

Skiwski M.

• Nicolaus Copernicus University 87-100 Toruń, ul. Grudziądzka 5

autor

Tarczewski T.

• Nicolaus Copernicus University 87-100 Toruń, ul. Grudziądzka 5

autor

Grzesiak L. M.

• Warsaw University of Technology 00-661 Warszawa, ul. Koszykowa 75

Bibliografia

• [1] Zdanowski M., Rąbkowski J., Barlik R., Transformers. High frequency DC/DC converter with Silicon Carbide devices - simulation analysis, Przegląd Elektrotechniczny, nr 2/2014, 2014, p. 201-204 (in Polish).
• [2] Singh R., Richmond J., SiC power schottky diodes in power –factor correction circuits, CREE inc. www.cree.com/power.
• [3] Niewiara L. J., Tarczewski T., Skiwski M., Grzesiak L. M., 9kW SiC MOSFET based DC/DC converter, Procedings of 17th European Conference on Power Electronics and Applications EPE’15 ECCE Europe, 2015, P.1 – P.9.
• [4] Peng F.Z., Su G-J., Tolbert L.M., A passive soft-switching Snubber for PWM inverters, IEEE Transactions on Power Electronics, Volume 19, Number 2, 2004, p. 363-370.
• [5] Jain P.K., Kang W., Soin H., Xi Y., Analysis and design considerations of a load and line independent zero voltage switching full bridge DC/DC converter topology, IEEE Transactions on Power Electronics, Volume 17, Number 5, 2002, p. 649-657.
• [6] Todd P.C., Snubber circuits: theory, design and applications, Unitrode-Power Supply Design Seminar, 1993.
• [7] C2M0080120D SiC N-channel MOSFET datasheet, Rev. B, www.cree.com
• [8] C4D10120A SiC schottky diode datasheet, Rev. B, www.cree.com