Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

• Autorzy: Kamyczek P. , Biegański P. , Płaczek-Popko E. , Zielony E. , Gelczuk Ł. , Sciana B. , Pucicki D. , Radziewicz D. , Tlaczala M , Kopalko K. , Dabrowska-Szata M.
• Języki publikacji: EN

Abstrakty

EN

In this paper we report on the optical and electrical studies of single GaAs1-xNx epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au–GaAs1-xNx contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80 – 480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.

Słowa kluczowe

EN

GaAs1-xNx; I-V; C-V; transmittance and reflectance spectra

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2013
• Tom: Vol. 31, No. 4
• Strony: 595--600
• Opis fizyczny: Bibliogr. 10 poz., rys., tab., wykr.

Twórcy

autor

Kamyczek P.

• Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

autor

Biegański P.

• Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

autor

Płaczek-Popko E.

• Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

autor

Zielony E.

• Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

autor

Gelczuk Ł.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

autor

Sciana B.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

autor

Pucicki D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

autor

Radziewicz D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

autor

Tlaczala M

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

autor

Kopalko K.

• Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46, 02-668 Warsaw, Poland

autor

Dabrowska-Szata M.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

Bibliografia

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