X-Ray Topography of the Subsurface Crystal Layers in the Skew Asymmetric Reflection Geometry

• Autorzy: Świątek Z. , Fodchuk I.

Identyfikatory

DOI

10.1515/amm-2016-0310

• Języki publikacji: EN

Abstrakty

EN

The technique of X ray topography with the asymmetric reflection geometry of X-ray diffraction presented in this paper as useful tool for structural characterization of materials, particularly, epitaxial thin films and semiconductor multi-layered crystal systems used for the optoelectronic devices. New possibilities of this technique for a layer-by-layer visualization of structural changes in the subsurface crystal layers are demonstrated for semiconductors after various types of surface treatment, such as chemical etching, laser irradiation and ion implantation.

Słowa kluczowe

EN

x-ray topography; subsurface crystal layers; asymmetric reflection geometry

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2016
• Tom: Vol. 61, iss. 4
• Strony: 1931--1938
• Opis fizyczny: Bibliogr. 20 poz., rys., wzory

Twórcy

autor

Świątek Z.

• Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta Str., 30-059 Kraków, Poland

autor

Fodchuk I.

• Yuriy Fedkovych Chernivtsi National University, 2, Kotsjubynskyi Str., 58002, Chernivtsi, Ukraine

Bibliografia

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