A current-source concept for fast and efficient driving of silicon carbide transistors

• Autorzy: Rąbkowski J.

Identyfikatory

DOI

10.2478/aee-2013-0026

• Języki publikacji: EN

Abstrakty

EN

The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.

Słowa kluczowe

EN

silicon carbide transistors; gate drivers; current-source; switching process

• Wydawca: Polish Academy of Sciences, Committee on Electrical Engineering
• Czasopismo: Archives of Electrical Engineering
• Rocznik: 2013
• Tom: Vol. 62, nr 2
• Strony: 333--343
• Opis fizyczny: Bibliogr. 13 poz., rys.

Twórcy

autor

Rąbkowski J.

• Institute of Control and Industrial Electronics, Faculty of Electrical Engineering Warsaw University of Technology Koszykowa 75, 00-660 Warszawa, Poland

Bibliografia

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