Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

• Autorzy: Abbas M. , Shah N. A. , Jehangir K. , Fareed M. , Zaidi A.

Identyfikatory

DOI

10.1515/msp-2018-0036

• Języki publikacji: EN

Abstrakty

EN

Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.

Słowa kluczowe

EN

ZnTe thin films; heat resistive materials; vacuum evaporation; electrical properties; optical characterization; structural characterization

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2018
• Tom: Vol. 36, No. 3
• Strony: 364--369
• Opis fizyczny: Bibliogr. 20 poz., rys., tab.

Twórcy

autor

Abbas M.

• Department of Physics, COMSATS Institute of Information Technology, Islamabad 4000, Pakistan
• Ripha International University, Islamabad 4000, Pakistan

autor

Shah N. A.

• Department of Physics, COMSATS Institute of Information Technology, Islamabad 4000, Pakistan

autor

Jehangir K.

• Pakistan Council of Renewable Energy Technologies, Islamabad 4000, Pakistan

autor

Fareed M.

• Pakistan Council of Renewable Energy Technologies, Islamabad 4000, Pakistan

autor

Zaidi A.

• Pakistan Council of Renewable Energy Technologies, Islamabad 4000, Pakistan

Bibliografia

• [1] ALI A., SHAH N.A., AQILI A.K.S., MAQSOOD A., Semicond. Sci. Tech., 21 (2006), 1296.
• [2] SYED W.A., SHAH N.A., Chalcogenide Lett., 12 (2015), 157.
• [3] KAZMERSKI L.L., AYYAGARI M.S., SANBORN G.A., J., Appl. Phys., 46 (1975), 4865.
• [4] RAO G.K., BANGERA K.V., SHIVAKUMAR G.K., Solid State Electron., 54 (2010), 787.
• [5] FENG L., MAO D., TANG J., CULINS R.T., TRENFNY J.U., J. Electron. Mater., 25 (1996), 1442.
• [6] CHAURE N.B., NASIR J.P., JAYAKRISHNAN R., GANESAN V., PANDEY R.K., Thin Solid Films, 324 (1998), 78.
• [7] SHAH N.A., NAZIR A., MAHMOOD W., SYED W.A.A., BUTT S., ALI Z., MAQSOOD A., J. Alloy. Compd., 512 (2012), 27.
• [8] SHAH N.A., ALI A., MAQSOOD A., J. Electron. Mater., 37 (2008), 145.
• [9] MURALI K.R., RAJKUMAR P.R., J. Mater. Sci. Mater. Electron., 17 (2006), 393.
• [10] MATSUMOTO T., ISHIDA T., J. Cryst. Growth, 67 (1984), 135.
• [11] PAL U., SAHA S., CHAUDHURI A.K., RAO V.V., BANERJEE H.D., J. Phys. D Appl. Phys., 22 (1989), 965.
• [12] WAQAR M., SHAH N.A., Opt. Mater.,36(2014),1449.
• [13] PATEL S.M., PATEL N.G., Mater. Lett., 1 (1983), 131.
• [14] VINCETT P.S., BARLOW W.A., ROBERTS G.G., J. Appl. Phys., 48 (1977), 3800.
• [15] KOBAYASHI S., SAITO N., SHIBUA T., Jpn. J. Appl. Phys., 19 (1980), 1199.
• [16] WAQAR M., SHAH N.A.,ThinSolidFilms,544(2013), 307.
• [17] NGUYEN C.Q., ADEOGUN A., AFZAAL M., MALIK M.A., BRIEN P.O., Chem. Commun., 18 (2006), 2182.
• [18] BINKS D.J., BANT S.P., WEST D.P., BRIEN P.O., MALIK M.A., J. Mod. Opt., 50 (2003), 299.
• [19] AKHTAR M., AKHTER J., MALIK M.A., BRIEN P.O., TUNA F., RAFTERY J., HELLIWELL M., J. Mater. Chem., 21 (2011), 9737.
• [20] ALI A., SHAH N.A, AQILI A.K.S., MAQSOOD A., Cryst. Growth Des., 6 (2006), 2149