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The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering

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EN
Abstrakty
EN
Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes’ coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al₂O₃. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300°C.
Twórcy
autor
  • Lublin University of Technology, Faculty of Environmental Engineering, ul. Nadbystrzycka 40B, 20-618 Lublin, Poland
autor
  • Lublin University of Technology, Faculty of Environmental Engineering, ul. Nadbystrzycka 40B, 20-618 Lublin, Poland
  • Lublin University of Technology, Faculty of Environmental Engineering, ul. Nadbystrzycka 40B, 20-618 Lublin, Poland
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Uwagi
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-2c2c778c-2828-4069-902d-6c27954181ab
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