The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering

• Autorzy: Zdyb A. , Krawczak E. , Gułkowski S.

Identyfikatory

DOI

10.1016/j.opelre.2018.07.002

• Języki publikacji: EN

Abstrakty

EN

Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes’ coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al₂O₃. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300°C.

Słowa kluczowe

EN

ZnO:Al; RF magnetron sputtering; transparent conductive oxide; TCO; transparent electrodes

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 3
• Strony: 247--251
• Opis fizyczny: Bibliogr. 38 poz., wykr.

Twórcy

autor

Zdyb A.

• Lublin University of Technology, Faculty of Environmental Engineering, ul. Nadbystrzycka 40B, 20-618 Lublin, Poland

autor

Krawczak E.

• Lublin University of Technology, Faculty of Environmental Engineering, ul. Nadbystrzycka 40B, 20-618 Lublin, Poland

autor

Gułkowski S.

• Lublin University of Technology, Faculty of Environmental Engineering, ul. Nadbystrzycka 40B, 20-618 Lublin, Poland

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).