Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface

• Autorzy: Grodzicki M , Mazur P , Wasielewski R , Ciszewski A
• Języki publikacji: EN

Abstrakty

EN

Ohmic electrical contacts were formed at room temperature on n-type, Si-oriented 6H-SiC substrates, with Cr layers vapor-deposited under ultra-high vacuum conditions on the samples being graphitized prior to the deposition. The contacts reveal a very good linearity of the local I–V characteristics. This method of ohmic contact formation does not require the use of samples with high doping concentration and the application of high-temperature annealing during the processing of contacts. Results of characterization of the contacts and of the in situ graphitization process of the SiC substrates, obtained by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and atomic force microscopy (AFM) with conducting tip, are given in this paper.

Słowa kluczowe

EN

silicon carbide; chromium; electric contacts; graphitization

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 91--98
• Opis fizyczny: Bibliogr. 11 poz., rys., wykr.

Twórcy

autor

Grodzicki M

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland
• On research stay at Wrocław Research Centre EIT+, Stabłowicka 147, 54-066 Wrocław, Poland

autor

Mazur P

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland

autor

Wasielewski R

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland
• On research stay at Wrocław Research Centre EIT+, Stabłowicka 147, 54-066 Wrocław, Poland

autor

Ciszewski A

• Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland

Bibliografia

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