Investigations of Interface Properties in Copper-Silicon Carbide Composites

• Autorzy: Chmielewski M. , Pietrzak K. , Strojny-Nędza A. , Jarząbek D. , Nosewicz S.

Identyfikatory

DOI

10.1515/amm-2017-0200

• Języki publikacji: EN

Abstrakty

EN

This paper analyses the technological aspects of the interface formation in the copper-silicon carbide composite and its effect on the material’s microstructure and properties. Cu-SiC composites with two different volume content of ceramic reinforcement were fabricated by hot pressing (HP) and spark plasma sintering (SPS) technique. In order to protect SiC surface from its decomposition, the powder was coated with a thin tungsten layer using plasma vapour deposition (PVD) method. Microstructural analyses provided by scanning electron microscopy revealed the significant differences at metal-ceramic interface. Adhesion force and fracture strength of the interface between SiC particles and copper matrix were measured. Thermal conductivity of composites was determined using laser flash method. The obtained results are discussed with reference to changes in the area of metal-ceramic boundary.

Słowa kluczowe

EN

copper matrix composites; silicon carbide; interface; thermal conductivity; adhesion

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2017
• Tom: Vol. 62, iss. 2B
• Strony: 1315--1318
• Opis fizyczny: Bibliogr. 12 poz., rys., tab.

Twórcy

autor

Chmielewski M.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str, 01-919 Warsaw, Poland

autor

Pietrzak K.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str, 01-919 Warsaw, Poland

autor

Strojny-Nędza A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str, 01-919 Warsaw, Poland

autor

Jarząbek D.

• Institute of Fundamental Technological Research Polish Academy of Sciences, 5b Pawinskiego, 02-106 Warsaw, Poland

autor

Nosewicz S.

• Institute of Fundamental Technological Research Polish Academy of Sciences, 5b Pawinskiego, 02-106 Warsaw, Poland

Bibliografia

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• [8] P. Nieroda, R. Zybala, K.T. Wojciechowski, AIP Conf. Proc. 1449, 199-202 (2012).
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• [11] R.R. Chromik, W.K. Neils, E.J. Cotts, J Appl Phys, 86 (8), 4273-4281 (1999).
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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)