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Analysis Of Factors Affecting Gravity-Induced Deflection For Large And Thin Wafers In Flatness Measurement Using Three-Point-Support Method

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Treść / Zawartość
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Accurate flatness measurement of silicon wafers is affected greatly by the gravity-induced deflection (GID) of the wafers, especially for large and thin wafers. The three-point-support method is a preferred method for the measurement, in which the GID uniquely determined by the positions of the supports could be calculated and subtracted. The accurate calculation of GID is affected by the initial stress of the wafer and the positioning errors of the supports. In this paper, a finite element model (FEM) including the effect of initial stress was developed to calculate GID. The influence of the initial stress of the wafer on GID calculation was investigated and verified by experiment. A systematic study of the effects of positioning errors of the support ball and the wafer on GID calculation was conducted. The results showed that the effect of the initial stress could not be neglected for ground wafers. The wafer positioning error and the circumferential error of the support were the most influential factors while the effect of the vertical positioning error was negligible in GID calculation.
Rocznik
Strony
531--546
Opis fizyczny
Bibliogr. 26 poz., rys., wykr.
Twórcy
autor
  • Dalian University of Technology, Key Laboratory for Precision and Non-Traditional Machining of Ministry of Education, 2 Linggong Road, Dalian 116024, P.R. China
autor
  • Dalian University of Technology, Key Laboratory for Precision and Non-Traditional Machining of Ministry of Education, 2 Linggong Road, Dalian 116024, P.R. China
autor
  • Dalian University of Technology, Key Laboratory for Precision and Non-Traditional Machining of Ministry of Education, 2 Linggong Road, Dalian 116024, P.R. China
autor
  • Dalian University of Technology, Key Laboratory for Precision and Non-Traditional Machining of Ministry of Education, 2 Linggong Road, Dalian 116024, P.R. China
autor
  • Dalian University of Technology, Key Laboratory for Precision and Non-Traditional Machining of Ministry of Education, 2 Linggong Road, Dalian 116024, P.R. China
Bibliografia
  • [1] Burghartz, J.N., Appel, W., Harendt, C., Rempp, H., Richter, H., Zimmermann, M. (2009). Ultra-thin chips and related applications, a new paradigm in silicon technology. ESSCIRC 2009. Proc. of the 35th European Solid-State Circuits Conference, Athens, Greece, 28−35.
  • [2] Gurnett, K., Adams, T. (2006). Ultra-thin semiconductor wafer applications and processes. III-Vs Review, 19(4), 38–40.
  • [3] Kim, Y.S., Maeda, et al. (2013). Advanced wafer thinning technology and feasibility test for 3D integration. Microelectronic Engineering, 107, 65–71.
  • [4] Fei, G., Xiaoyun, D., Gaowei, X., Le, L. (2009). A wafer-level 3D packaging structure with Benzocyclobutene as a dielectric for multichip module fabrication. Journal of Semiconductors, 30(10), 106003.
  • [5] Draney, N.R., Liu, J.J., Jiang, T. (2004). Experimental investigation of bare silicon wafer warp. IEEE Workshop on Microelectronics and Electron Devices, WMED: IEEE Electron Devices Northwest Regional Meeting, Boise, ID, United states, 120−123.
  • [6] Ng, C.S., Asundi, A.K. (2011). Warpage measurement of thin wafers by reflectometry. Physics Procedia, 19, 9−20.
  • [7] SEMI. (2007). Test method for measuring bow and warp on silicon wafers by automated noncontact scanning. http://www.semi.org
  • [8] Gao, S., Dong, Z., Kang, R., Zhang, B., Guo, D. (2015). Warping of silicon wafers subjected to back-grinding process. Precision Engineering, 40, 87–93.
  • [9] Chu, J., Griesmann, U., Wang, Q., Soons, J.A., Benck, E.C. (2010). Deformation-free form error measurement of thin, plane-parallel optics floated on a heavy liquid. Applied Optics, 49(10), 1849−1858.
  • [10] Griesmann, U., Wang, Q., Benck, E.C., Chu, J., Sohn, J. (2010). Flatness measurements of thin, plane-parallel optics floated on a heavy liquid. ASPE 2010 Summer Topical Meeting on Precision Interferometric Metrology, Ashville, NC, 62–66.
  • [11] Natsu, W., Ito, Y., Kunieda, M., Naoi, K., Iguchi, N. (2005). Effects of support method and mechanical property of 300 mm silicon wafer on sori measurement. Precision Engineering, 29(1), 19−26.
  • [12] Ito, Y., Natsu, W., Kunieda, M., Maruya, N., Iguchi, N. (2006). Accuracy estimation of shape measurement of thin-large panel with three-point-support inverting method. JSME International Journal, Series C: Mechanical Systems, Machine Elements and Manufacturing, 49(3), 930–934.
  • [13] Shams, M., Destrade, M., Ogden, R.W. (2011). Initial stresses in elastic solids: Constitutive laws and acoustoelasticity. Wave Motion, 48(7), 552–567.
  • [14] Zarudi, I., et al. (1996). Subsurface damage in single-crystal silicon due to grinding and polishing. Journal of Materials Science Letters, 15(7), 586–587.
  • [15] Yukihiro, I., Wataru, N., Masanori, K. (2010). Effect of Anisotropy on Shape Measurement Accuracy of Silicon Wafer Using Three-Point-Support Inverting Method. Journal of Advanced Mechanical Design, Systems, and Manufacturing, 4(5), 1066−1075.
  • [16] Hopcroft, M.A., Nix, W.D., Kenny, T.W. (2010). What is the Young’s Modulus of Silicon? Journal of Microelectromechanical Systems, 19(2), 229−238.
  • [17] Boryczko, A., Rytlewski, W. (2014). Surface irregularities as a complex signal of tool representation together with uneven displacement in respect to the workpiece. Metrol. Meas. Syst., 21(1), 133−144.
  • [18] Iwasinska-Kowalska, O. (2014). A system for precise laser beam angular steering. Metrol. Meas. Syst., 21(1), 27−36.
  • [19] Huang, H., Wang, B.L., Wang, Y., Zou, J., Zhou, L. (2008). Characteristics of silicon substrates fabricated using nanogrinding and chemo-mechanical-grinding. Materials Science and Engineering: A, 479 (1−2), 373−379.
  • [20] Zhang, P.F., Pei, Z.J. (2009). Lapping of semiconductor wafers: An experimental investigation on subsurface damage. Proc.of the ASME International Manufacturing Science and Engineering Conference 2009, MSEC2009, West Lafayette, IN, United States, 715–719.
  • [21] Wang, Y., Zou, J., Huang, H., Zhou, L., Wang, B.L., Wu, Y.Q. (2007). Formation mechanism of nanocrystalline high-pressure phases in silicon during nanogrinding. Nanotechnology, 18(46), 465705.
  • [22] Wu, Y.Q., Huang, H., Zou, J., Zhang, L.C., Dell, J.M. (2010). Nanoscratch-induced phase transformation of monocrystalline Si. Scripta Materialia, 63(8), 847–850.
  • [23] Huang, H., Wu, Y.Q., Wang, Y., Zou, J., Zhou, L. (2009). Subsurface structures of monocrystalline silicon generated by nanogrinding. Key Engineering Materials, 389−390, 465–468.
  • [24] Gao, S., Kang, R., Dong, Z., Guo, D. (2013). Subsurface damage distribution in silicon wafers ground with wafer rotation grinding method. Jixie Gongcheng Xuebao/Journal of Mechanical Engineering, 49(3), 88–94.
  • [25] Janssen, G.C.A.M., Abdalla, M.M., van Keulen, F., Pujada, B.R., van Venrooy, B. (2009). Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers. Thin Solid Films, 517(6), 1858−1867.
  • [26] Feng, X., Huang, Y., Rosakis, A.J. (2007). On the Stoney Formula for a Thin Film/Substrate System With Nonuniform Substrate Thickness. Journal of Applied Mechanics, 74(6), 1276.
Uwagi
EN
The authors would like to acknowledge the financial support from the National Natural Science Foundation of China (91323302), Science Fund for Creative Research Groups of NSFC (51321004), the State Key Development Program for Basic Research of China (2011CB013201), the National High Technology Research and Development Program of China (2013AA040104) and National Science and Technology Major Project of China (2014ZX02504001). We are very grateful for the discussion with Professor Bi Zhang.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-28fd05c9-7a73-4674-99db-64bab0e86a48
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