Application of Aloe vera gel instead of silicon dioxide as organic dielectric material in microelectronics

• Autorzy: Rana S. M. , Al-Amin R. , Uz-Zaman A. , Talukder S. H. , Mia N. H. , Tayyaba S. , Hoq M.

Identyfikatory

DOI

10.1515/msp-2015-0069

• Języki publikacji: EN

Abstrakty

EN

Organic materials are now being used in a wide range of microelectronic applications in parallel with inorganic materials, because of their superior properties, environmental safety, and low cost. This paper describes the characterization of Aloe vera gel (AVG), a new organic dielectric material. The surface morphology, spatial distribution of elements, and structural characteristics of an AVG layer were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray diffraction (XRD), respectively. The resistance of the AVG layer, determined using a four-probe station, was 640 Omega. EDX showed that the elements contained in the layer were carbon, oxygen, aluminum, silicon, calcium, potassium, and copper. The XRD results suggested that the sample primarily consisted of bornite (Cu5FeS4), geerite (Cu8S5), sal ammoniac (NH4Cl), and carobbite (KF).

Słowa kluczowe

EN

Aloe vera; organic dielectric material; four probe station; SEM; EDX; XRD

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 3
• Strony: 635--638
• Opis fizyczny: Bibliogr. 14 poz., rys., tab.

Twórcy

autor

Rana S. M.

• Institute of Electronics, Atomic Energy Research Establishment, Dhaka, Bangladesh

autor

Al-Amin R.

• Department of EEE, University of Dhaka (Mymensingh Engineering College), Dhaka, Bangladesh

autor

Uz-Zaman A.

• Institute of Electronics, Atomic Energy Research Establishment, Dhaka, Bangladesh

autor

Talukder S. H.

• Department of EEE, University of Dhaka (Mymensingh Engineering College), Dhaka, Bangladesh

autor

Mia N. H.

• Institute of Electronics, Atomic Energy Research Establishment, Dhaka, Bangladesh

autor

Tayyaba S.

• The University of Lahore, Pakistan

autor

Hoq M.

• Institute of Electronics, Atomic Energy Research Establishment, Dhaka, Bangladesh

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