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Four-point probe resistivity noise measurements of GaSb layers

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Języki publikacji
EN
Abstrakty
EN
This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described. The gain calculations for local resistance noise are performed to evaluate the contribution to total noise from different areas of the layer. It was shown, through numerical calculations and noise measurements, that in four-point probe specimens, with separated current and voltage terminals, the non-resistance noise of the contact and the resistance noise of the layer can be identified. The four-point probe method is used to find the low frequency resistance noise of the GaSb layer with a different doping type. For n-type and p-type GaSb layers with low carrier concentrations, the measured noise is dominated by the non-resistance noise contributions from contacts. Low frequency resistance noise was identified in high-doped GaSb layers (both types). At room temperature, such resistance noise in an n-type GaSb layer is significantly larger than for p-type GaSb with comparable doping concentration.
Rocznik
Strony
135--140
Opis fizyczny
Bibliogr. 12 poz., rys., tab., wykr.
Twórcy
autor
  • Department of Electronics Fundamentals, Rzeszow University of Technology
autor
  • Department of Electronics Fundamentals, Rzeszow University of Technology
  • The Łukasiewicz Research Network – Institute of Electron Technology
autor
  • The Łukasiewicz Research Network – Institute of Electron Technology
Bibliografia
  • [1] L.K.J. Vandamme, “Noise as a diagnostic tool for quality and reliability of electronic devices,” IEEE Transactions on Electron Devices 41(11), 2176‒2187, 1994.
  • [2] B.K. Jones, “Low-frequency noise spectroscopy,” IEEE Transactions on Electron Devices 41(11), 2188‒2197, 1994.
  • [3] T.G.M. Kleinpenning, S.Jarrix, and G. Lecoy, “Generation‐recombination noise in submicron semiconductor layers: Influence of the edges,” Journal of Applied Physics 78(4), 2883‒2885, 1995.
  • [4] D. Wu, Q. Durlin, A. Dehzangi, Y. Zhang, and M. Razeghi, “High quantum efficiency mid-wavelength infrared type-II InAs/ InAs1− xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition,” Applied Physics Letters 114(1), 011104, 2019.
  • [5] E. Gomółka, O. Markowska, M. Kopytko, A. Kowalewski, P. Martyniuk, A. Rogalski, J. Rutkowski, M. Motyka, and S. Krishna, “Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design,” Bull. Pol. Ac.: Tech. 66(3), 317‒323, 2018.
  • [6] Y. Teng, Y. Zhao, Q. Wu, X. Li, X. Hao, M. Xiong, and Y. Huang, “High-Performance Long-Wavelength InAs/GaSb Superlattice Detectors Grown by MOCVD,” IEEE Photonics Technology Letters 31(2), 185‒188, 2019.
  • [7] P.S. Dutta, H.L. Bhat, and V. Kumar, “The physics and technology of gallium antimonide: An emerging optoelectronic material,” Journal of Applied Physics 81(9), 5821‒5870, 1997.
  • [8] F. Crupi, G. Giusi, C. Ciofi, and C. Pace, “Enhanced Sensitivity Cross-Correlation Method for Voltage Noise Measurements,” IEEE Transactions on Instrumentation and Measurement 55(4), 1143‒1147, 2006.
  • [9] C. Ciofi, F. Crupi, and C. Pace, “A new method for high-sensitivity noise measurements,” IEEE Transactions on Instrumentation and Measurement 51(4), 656‒659, 2002.
  • [10] L.K.J. Vandamme and W.M.G. van Bokhoven, “Conductance noise investigations with four arbitrarily shaped and placed electrodes,” Applied Physics A 14(2), 205‒215, 1977.
  • [11] B. Ayhan, C. Kwan, J. Zhou, L.B. Kish, K.D. Benkstein, P.H. Rogers, and S. Semancik, “Fluctuation enhanced sensing(FES) with a nanostructured, semiconducting metal oxide film for gas detection and classification,” Sensors and Actuators B: Chemical 188, 651‒660, 2013.
  • [12] L.K.J. Vandamme and G. Leroy, “Analytical expressions for correction factors for noise measurements with a four-point probe ” Fluctuation and Noise Letters 6(2), 161‒178, 2006.
Uwagi
PL
Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-27c567d0-b4f1-4bf2-a519-3d631cf6e8b0
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