Barrier Structures on the Basis of Graded-Band-Gap CdHgTe Obtained by Evaporation-Condensation-Diffusion Method

• Autorzy: Świątek Z. , Vlasov A. P. , Ivashko M. V. , Petryna R. L. , Bonchyk A. Yu. , Sokolovskii B. S.

Identyfikatory

DOI

0.1515/amm-2016-0022

• Języki publikacji: EN

Abstrakty

EN

The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated.

Słowa kluczowe

EN

obtaining photovoltaic structures; barrier structures; evaporation-condensation-diffusion method

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2016
• Tom: Vol. 61, iss. 1
• Strony: 115--122
• Opis fizyczny: Bibliogr. 23 poz., rys., schem., tab., wykr.

Twórcy

autor

Świątek Z.

• Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta str., 30-059 Krakow, Poland

autor

Vlasov A. P.

• Lviv State University of Physical Culture, 11 Kostiushka str., 79001, Lviv, Ukraine

autor

Ivashko M. V.

• Lviv State University of Physical Culture, 11 Kostiushka str., 79001, Lviv, Ukraine

autor

Petryna R. L.

• Lviv State University of Physical Culture, 11 Kostiushka str., 79001, Lviv, Ukraine

autor

Bonchyk A. Yu.

• Institute for Applied Problems of Mechanics and Mathematics of NASU, 3b Naukova str., 79601, Lviv, Ukraine

autor

Sokolovskii B. S.

• Ivan Franko National University of Lviv, 50 Dragomanov str., 79005 Lviv, Ukraine

Bibliografia

• [1] A. Rogalski, Defence Science Journal 51(1),5-34 (2001).
• [2] G. Cohen-Solal, Y. Marfaing, F. Bailly, Phys.Appl. Rev.6 , 11-17 (1966).
• [3] J. Piotrowski, A. Piotrowski, Opto-Electr. Rev. 14(1), 37-45 (2006).
• [4] U. Gilabert, E. Heredia, A. B. Trigubo, Thin Solid Films 317, 1-6 (2006).
• [5] B. Koo, J. Wang, Y. Ishikawa, C. G. Lee, M. Isshiki, Jpn. J. Appl. Phys. 37, 4082-4085 (1998).
• [6] J.-G. Lo, H. Lan, J.-Y. Chen, L. S. Lu, Jpn. J. Appl. Phys. 30(8), 1770-1774 (1991).
• [7] V. S. Varavin, Yu. G. Sidorov, V. G. Remesnyk, S. I. Chikichev, I. E. Nis, Fizika i technika poluprovodnikov 28(4), 577-583 (1994 ) (In Russian).
• [8] V. G. Savitskii, B. S. Sokolovskii, M. I. Stodilka, V. I. Furman, Ukrainskii fizicheskii zurnal 23(5), 792-797 (1978) (In Russian).
• [9] B. S. Sokolovskii, Semiconductors 30(6), 361-1368 (1996).
• [10] B. S. Sokolovskii, V. I. Ivanov-Omskii, G. A. Il’chuk, Semiconductors 39(12), 1361-1368 (2005).
• [11] B. S. Sokolovskii, V. K. Pysarevskii, O. V. Nemolovskii, Z. Swiatek, Thin Solid Films 431-432, 457-460 (2003).
• [12] Method of growth of epitaxial layers of solid solutions on the basis of chalcogenides of mercury. V.G. Savitskii, L.I. Aleksenko, Patent of USS R, No. 668505, 12.04.1977 (In Russian).
• [13] V. G. Savitsky, O.P. Storchun, Thin Solid Films 317, 105-107 (1998).
• [14] A. Vlasov, V. Pysarevsky, O. Storchun, A. Shevchenko, A. Bonchyk, H. Pokhmurska, A. Barcz, Z. Swiatek, Thin Solid Films 403-404, 144-147 (2002).
• [15] A. P. Vlasov, A. Yu. Bonchyk, I. M. Fodchuk, R. A. Zaplitnyy, A. Barcz, Z. Swiatek, Semiconductor Physics, Quantum Electronics & Optoelectronics 9(1), 36-42 (2006).
• [16] Method of obtaining epitaxial layers of binary semiconductor alloys. L. I. Alekseenko, N. N. Berchenko, V. E. Krevs, I. E. Maronchuk, Yu. G. Pukhov, V. G.Savitskii, A. R. Filatova, Patent of USS R , No.668504, 23.07.1975 (in Russian).
• [17] Technique of cover deposition. V.G. Savitskii, L.G. Mansurov, M.V. Miliyanchuk, B.A. Simkiv, Patent of USS R, No. 1480362, 04.08.1987 (in Russian).
• [18] A. Vlasov, V. Bogoboyashchyy, O. Bonchyk, A. Barcz, Cryst. Res. Technol. 39(1), 11-22 (2004).
• [19] A. P. Vlasov, B.S. Sokolovskii, L.S. Monastyrskii, O.Yu. Bonchyk, A. Barcz, Thin Solid Films 459(1-2), 28-31 (2004).
• [20] A. P. Vlasov, A. Yu. Bonchyk, I. M. Fodchuk, R. A. Zaplitnyy, A. Barcz, Z. Swiatek, Semiconductor Physics, Quantum Electronics & Optoelectronics 9(1), 36-42 (2006).
• [21] A. P. Vlasov, V. K. Pysarevsky, A. V. Shevchenko, A. Yu. Bonchyk, A. Barch, Proc. SPIE (5126), 391-397 (2003).
• [22] J. Piotrowski, M. Grudzien, Z. Nowak, Z. Orman, J. Pawluchyk, M. Romanis, W. Gawron, Proc. SPIE 4130, 175-184 (2000).
• [23] W. Gawron, A. Rogalski, Infrared Physics & Technology 43, 157-163 (2002).

Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę