Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Gu, J. H.; Lu, Z.; Long, L.; Zhong, Z. Y.; Yang, C. Y.; Hou, J.

doi:10.1515/msp-2015-0065

Artykuł - szczegóły

Tytuł artykułu

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Autorzy

Gu J. H. , Lu Z. , Long L. , Zhong Z. Y. , Yang C. Y. , Hou J.

Wybrane pełne teksty z tego czasopisma

Identyfikatory

DOI

10.1515/msp-2015-0065

Warianty tytułu

Języki publikacji

Abstrakty

Highly conductive gallium-doped zinc oxide (GZO) transparent thin films were deposited on glass substrates by RF magnetron sputtering. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystallographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400 degrees C, which have the largest grain size (74.3 nm), the lowest electrical resistivity (1.31 x 10(-3) Omega.cm) and the maximum figure of merit (1.46 x 10(-2) Omega(-1)), exhibit the best optoelectrical properties. Furthermore, the optical properties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.

Słowa kluczowe

zinc oxide thin films magnetron sputtering optical properties

Wydawca

De Gruyter

Czasopismo

Materials Science Poland

Rocznik

2015

Tom

Vol. 33, No. 3

Strony

470--481

Opis fizyczny

Bibliogr. 65 poz., rys., tab.

Twórcy

autor

Gu J. H.

jhgalpha@163.com

Center of Experiment Teaching, South-Central University for Nationalities, Wuhan 430074, P. R. China

autor

Lu Z.

College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China

autor

Long L.

College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China

autor

Zhong Z. Y.

College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, P. R. China

autor

Yang C. Y.

College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, P. R. China

autor

Hou J.

College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, P. R. China

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Typ dokumentu

Bibliografia

Identyfikator YADDA

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