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Tytuł artykułu

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Autorzy
Gu J. H. , Lu Z. , Long L. , Zhong Z. Y. , Yang C. Y. , Hou J.
Wybrane pełne teksty z tego czasopisma
Identyfikatory
DOI
10.1515/msp-2015-0065
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Highly conductive gallium-doped zinc oxide (GZO) transparent thin films were deposited on glass substrates by RF magnetron sputtering. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystallographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400 degrees C, which have the largest grain size (74.3 nm), the lowest electrical resistivity (1.31 x 10(-3) Omega.cm) and the maximum figure of merit (1.46 x 10(-2) Omega(-1)), exhibit the best optoelectrical properties. Furthermore, the optical properties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.
Słowa kluczowe
EN
Wydawca
De Gruyter
Czasopismo
Materials Science Poland
Rocznik
2015
Tom
Vol. 33, No. 3
Strony
470--481
Opis fizyczny
Bibliogr. 65 poz., rys., tab.
Twórcy
autor
Gu J. H.
jhgalpha@163.com
  • Center of Experiment Teaching, South-Central University for Nationalities, Wuhan 430074, P. R. China
autor
Lu Z.
  • College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
autor
Long L.
  • College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
autor
Zhong Z. Y.
  • College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
  • Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, P. R. China
autor
Yang C. Y.
  • College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
  • Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, P. R. China
autor
Hou J.
  • College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, P. R. China
  • Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan 430074, P. R. China
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-264955b8-27b7-4a65-93eb-1348fffdd9b2
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