Thermal resistance of GaAs/AlAs superlattices used in modern light-emitting diodes

• Autorzy: Żak D. , Nakwaski W.

Identyfikatory

DOI

10.2478/s11772-014-0181-3

• Języki publikacji: EN

Abstrakty

EN

Superlattices are used in modern light-emitting diodes to modify intentionally electron, phonon and/or photon transport within their volumes, which leads to their expected performance characteristics. In particular, superlattices may have a dramatic impact on device thermal properties. Superlattice thermal resistance is anisotropic and usually distinctly higher than its values in constituent bulk materials, which results from phonon reflections and/or phonon scatterings at numerous layer interfaces. In the present paper, thermal resistance of a typical superlattice of layer thicknesses neither much higher nor much lower than the phonon free path is discussed. Besides, as an important example, thermal resistance of the typical GaAs/AlAs superlattice is determined theoretically and compared with its measured values known from literature.

Słowa kluczowe

EN

superlattice thermal resistance; GaAs/AlAs superlattices; light-emitting diodes; phonon scatterings; phonon reflections

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2014
• Tom: Vol. 22, No. 2
• Strony: 86--91
• Opis fizyczny: Bibliogr. 16 poz., wykr.

Twórcy

autor

Żak D.

• Photonics Group, Institute of Physics, Technical University of Lodz, 219 Wólczańska Str., 90-924 Łódź, Poland

autor

Nakwaski W.

• Photonics Group, Institute of Physics, Technical University of Lodz, 219 Wólczańska Str., 90-924 Łódź, Poland

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