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Temperature-dependence of cathodoluminescence of zinc oxide monolayers obtained by atomic layer deposition

Treść / Zawartość
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
We performed cathodoluminescence (CL) investigations of zinc oxide monolayers obtained by atomic layer deposition. Layers of different thickness were deposited on commercial GaN/sapphire templates. Scanning electron microscopy (SEM) system equipped with CL allows direct comparison of SEM images and CL maps, taken from exactly the same areas of samples. In addition to SEM and CL images, CL profiling was performed by collecting the CL spectra at different accelerating voltages. The CL profiling allows to distinguish the emissions from a surface and volume of samples. An inter-link between samples microstructure and emission properties is investigated. Shifts of emission bands, associated by us with the localization effects, are observed. CL investigations are supported by photoluminescence (PL) measurements, which are characterized by a higher spectral resolution. PL investigations allow determination of the origin of emission bands.
Czasopismo
Rocznik
Strony
187--194
Opis fizyczny
Bibliogr. 15 poz., rys. wykr.
Twórcy
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
autor
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
autor
  • Institute of Physics, Kazimierz Wielki University, Weyssenhoffa 11, 85-072 Bydgoszcz, Poland
autor
  • Department of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland
Bibliografia
  • [1] KLINGSHIRN C., FALLERT J., ZHOU H., SARTOR J., THIELE C., MAIER-FLAIG F., SCHNEIDER D., KALT H., 65 years of ZnO research – old and very recent results, Physica Status Solidi (B) 247(6) 2010, pp. 1424–1447.
  • [2] OZGUR U., ALIVOV YA. I., LIU C., TEKE A., RESHCHIKOV M. A., DOGAN S., AVRUTIN V., CHO S.-J., MORKOC H., A comprehensive review of ZnO materials and devices, Journal of Applied Physics 98(4), 2005, article 041301.
  • [3] KRAJEWSKI T., GUZIEWICZ E., GODLEWSKI M., WACHNICKI L., KOWALIK I.A., WOJCIK-GLODOWSKA A., LUKASIEWICZ M., KOPALKO K., OSINNIY V., GUZIEWICZ M., The influence of growth temperature and precursors’ doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique, Microelectronics Journal 40(2), 2009, pp. 293–295.
  • [4] LUKA G., GODLEWSKI M., GUZIEWICZ E., STAKHIRA P., CHERPAK V., VOLYNYUK D., ZnO films grown by atomic layer deposition for organic electronics, Semiconductor Science and Technology 27(7), 2012, article 074006.
  • [5] GUZIEWICZ E., GODLEWSKI M., KRAJEWSKI T., WACHNICKI Ł., SZCZEPANIK A., KOPALKO K., WÓJCIK-GŁODOWSKA A., PRZEŹDZIECKA E., PASZKOWICZ W., ŁUSAKOWSKA E., KRUSZEWSKI P., HUBY N., TALLARIDA G., FERRARI S., ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions, Journal of Applied Physics 105(12), 2009, article 122413.
  • [6] GIERALTOWSKA S., WACHNICKI L., WITKOWSKI B.S., GODLEWSKI M., GUZIEWICZ E., Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications, Thin Solid Films 520(14), 2012, pp. 4694–4697.
  • [7] JIAQIANG XU, QINGYI PAN, YU’AN SHUN, ZHIZHUANG TIAN, Grain size control and gas sensing properties of ZnO gas sensor, Sensors and Actuators B: Chemical 66(1–3), 2000, pp. 277–279.
  • [8] FOLEY M., CUONG TON-THAT, PHILLIPS M.R., Luminescent properties of ZnO structures grown with a vapour transport method, Thin Solid Films 518(15), 2010, pp. 4231–4233.
  • [9] WACHNICKI Ł., KRAJEWSKI T., ŁUKA G., WITKOWSKI B., KOWALSKI B., KOPALKO K., DOMAGALA J.Z., GUZIEWICZ M., GODLEWSKI M., GUZIEWICZ E., Monocrystalline zinc oxide films grown by atomic layer deposition, Thin Solid Films 518(16), 2010, pp. 4556–4559.
  • [10] WITKOWSKI B.S., WACHNICKI Ł., JAKIEŁA R., GUZIEWICZ E., GODLEWSKI M., Cathodoluminescence measurements at liquid helium temperature of poly- and monocrystalline ZnO films, Acta Physica Polonica A 120(6-A), 2011, p. A-28.
  • [11] GODLEWSKI M., GOLDYS E.M., PHILLIPS M.R., LANGER R., BARSKI A., Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures, Journal of Materials Research 15(2), 2000, pp. 495–501.
  • [12] MEYER B. K., ALVES H., HOFMANN D.M., KRIEGSEIS W., FORSTER D., BERTRAM F., CHRISTEN J., HOFFMANN A., STRAßBURG M., DWORZAK M., HABOECK U., RODINA A.V., Bound exciton and donor–acceptor pair recombinations in ZnO, Physica Status Solidi (B) 241(2), 2004, pp. 231–260.
  • [13] TEKE A., ÖZGÜR Ü., DOGAN S., GU X., MORKOÇ H., NEMETH B., NAUSE J., EVERITT H.O., Excitonic fine structure and recombination dynamics in single-crystalline ZnO, Physical Review B 70(19), 2004, article 195207.
  • [14] WYSMOLEK A., KORONA K.P., STĘPNIEWSKI R., BARANOWSKI J.M., BŁONIARZ J., POTEMSKI M., JONES R.L., LOOK D.C., KUHL J., PARK S.S., LEE S.K., Recombination of excitons bound to oxygen and silicon donors in freestanding GaN, Physical Review B 66(24), 2002, article 245317.
  • [15] LI Q., XU S.J., XIE M.H., TONG S.Y., Origin of the ‘S-shaped’ temperature dependence of luminescent peaks from semiconductors, Journal of Physics: Condensed Matter 17(30), 2005, pp. 4853–4858.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-24fc10ab-4976-4dc9-9e01-3988d0503d59
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