Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

• Autorzy: Kalsoom U. , Rafique M. S. , Shahzadi S. , Fatima K. , Shaheen R.

Identyfikatory

DOI

10.1515/msp-2017-0099

• Języki publikacji: EN

Abstrakty

EN

The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the AFM micrographs of the films also confirmed the formation of bi- tri- and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bi- tri- or few- layer graphene using pulsed laser deposition technique.

Słowa kluczowe

EN

graphene; Raman spectroscopy; atomic force microscopy; pulsed laser deposition

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2017
• Tom: Vol. 35, No. 4
• Strony: 687--693
• Opis fizyczny: Bibliogr. 33 poz., rys., tab.

Twórcy

autor

Kalsoom U.

• Department of Physics, University of Engineering and Technology, Lahore-54890, Pakistan

autor

Rafique M. S.

• Department of Physics, University of Engineering and Technology, Lahore-54890, Pakistan

autor

Shahzadi S.

• Department of Physics, University of Engineering and Technology, Lahore-54890, Pakistan

autor

Fatima K.

• Department of Physics, University of Engineering and Technology, Lahore-54890, Pakistan

autor

Shaheen R.

• Department of Physics, University of Engineering and Technology, Lahore-54890, Pakistan

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).