Semiconductor contact layer characterization in a context of hall effect measurements

• Autorzy: Kowalewski Andrzej , Wróbel Jarosław , Boguski Jacek , Gorczyca Kinga , Martyniuk Piotr

Identyfikatory

DOI

10.24425/mms.2019.126324

• Języki publikacji: EN

Abstrakty

EN

A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (R_d) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.

Słowa kluczowe

EN

metal contact; contact layer; contact resistance; Hall effect; resistivity; van der Pauw method; MSM structure; semiconductors’ characterization

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2019
• Tom: Vol. 26, nr 1
• Strony: 109--114
• Opis fizyczny: Bibliogr. 18 poz., rys., tab.

Twórcy

autor

Kowalewski Andrzej

• Military University of Technology, Institute of Applied Physics, Urbanowicza 2, 00-908 Warsaw, Poland

autor

Wróbel Jarosław

• Military University of Technology, Institute of Applied Physics, Urbanowicza 2, 00-908 Warsaw, Poland

autor

Boguski Jacek

• Military University of Technology, Institute of Applied Physics, Urbanowicza 2, 00-908 Warsaw, Poland

autor

Gorczyca Kinga

• Military University of Technology, Institute of Applied Physics, Urbanowicza 2, 00-908 Warsaw, Poland

autor

Martyniuk Piotr

• Military University of Technology, Institute of Applied Physics, Urbanowicza 2, 00-908 Warsaw, Poland

Bibliografia

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• [4] Montgomery, H.C. (1971). Method for Measuring Electrical Resistivity of Anisotropic Materials. Journal of Applied Physics, 42(7), 2971-975.
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• [6] Antoszewski, J., Umana-Membreno, G.A., Faraone, L. (2012). High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials. Journal of Electronic Materials, 41(10), 2816-2823.
• [7] Woltjer, R., de Blank, M.J.M., Harris, J.J., Foxon, C.T., André, J.P. (1989). The Influence of Contacts on the Quantized Hall Effect. Location: Springer Berlin Heidelberg.
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• [13] Elhadidy, H., Sikula, J., Franc, J. (2012). Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure.
• [14] Di Bartolomeo, A., Grillo, A., Urban, F., Iemmo, L., Giubileo, F., Luongo, G., Amato, G., Croin, L., Sun, L., Liang, S.J., Ang, L.K. (2018). Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors. Advanced Functional Materials, 1800657.
• [15] Boguski, J., Kolwas, K., Kubiszyn, L., Michalczewski, K., Piotrowski, J., Wrobel, J., Gorczyca, K., Keblowski, A., Martyniuk, P. (2018). Study on the specific contact resistance of evaporated or electroplated golden contacts to n- and p- type InAs epitaxial layers grown by MBE. Materials Science in Semiconductor Processing, 81, 60-63.
• [16] Gorczyca, K., Boguski, J., Wrobel, J., Martyniuk, P. (2018). Selected technological aspects of preparation of semiconductor samples for Hall effect measurements. The 13th Conference Integrated Optics - Sensors, Sensing Structures and Methods. Location: SPIE.
• [17] Kowalewski, A., Martyniuk, P., Markowska, O., Benyahia, D., Gawron, W., (2016). New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates. Materials Science in Semiconductor Processing, 41, 261-264.
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Uwagi

EN

1. This study was carried out with the financial support from the Polish National Science Center (grant no. UMO-2015/17/B/ST5/01753).

PL

2. Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).