Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method

• Autorzy: Bychto L. , Maliński M.

Identyfikatory

DOI

10.1515/oere-2016-0008

• Języki publikacji: EN

Abstrakty

EN

The paper presents experimental results of the lifetime of light induced excess carriers in the n-type silicon. The lifetimes of carriers of silicon crystals were analysed as a function of the intensity of light illuminating the sample. As a measurement method of the lifetime of carriers, the photoacoustic method in a transmission configuration with different surfaces was used. The dependence character was next analysed in the frame of the Shockley Reed Hall statistics in approximation of the light low intensity.

Słowa kluczowe

EN

photoacoustics; carrier lifetime; SHR statistics

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2016
• Tom: Vol. 24, No. 2
• Strony: 58--61
• Opis fizyczny: Bibliogr. 20 poz., wykr.

Twórcy

autor

Bychto L.

• Faculty of Electronics and Computer Science Koszalin University of Technology ul. Śniadeckich 2, 75–453 Koszalin Poland

autor

Maliński M.

• Faculty of Electronics and Computer Science Koszalin University of Technology ul. Śniadeckich 2, 75–453 Koszalin Poland

Bibliografia

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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.