Effect of vacancy defect position on the Zigzag Phosphorene Nanoribbon Tunneling FETs

• Autorzy: Owlia Hadi , Nasrollahnejad Mohammad Bagher , Rezai Abdalhossein

Identyfikatory

DOI

10.24425/ijet.2025.155476

• Języki publikacji: EN

Abstrakty

EN

In this paper, the important characteristics of a Zigzag Phosphorene Nanoribbon Tunneling FET (ZPNR-TFET) are studied by inserting a single vacancy (SV) defect. After adjusting the positions of the defect in the length of the channel, it is found that the SV defect decreases on current in all three defect positions, and the biggest reduction is when the SV defect is in the center position. The off current decreases when the SV defect is located in the center of the channel and increases when the defect is located near the source and drain. The largest increase in off current is related to the location of the defect close to the source. The on-off current ratio decreases in all three defect positions. The greatest impact is related to the condition where the defect is located on the source side. Semi-empirical Slater-Koster approach using DFTB-CP2K parameters were used for the density functional based tight binding (DFTB) calculations of ZPNR.

Słowa kluczowe

EN

Phosphorene nanoribbon; vacancy defect; CP2K method; Density functional tight binding

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2025
• Tom: Vol. 71, No. 4
• Strony: 23
• Opis fizyczny: Bibliogr. 42 poz., rys.

Twórcy

autor

Owlia Hadi

• Ardakan University

autor

Nasrollahnejad Mohammad Bagher

• Islamic Azad University, Gorgan, Iran

autor

Rezai Abdalhossein

• University of Science and Culture, Tehran, Iran

Bibliografia

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