Optimization and characterization of NiO thin films prepared via NSP technique and its P-N junction diode application

• Autorzy: Saju Joseph , Balasundaram O. N.

Identyfikatory

DOI

10.2478/msp-2019-0049

• Języki publikacji: EN

Abstrakty

EN

The present work reports on the optimization of substrate temperature, molar concentration and volume of the solution of nickel oxide (NiO) thin films prepared by nebulizer spray pyrolysis (NSP) technique. NiO films were optimized and characterized by XRD, SEM, EDX, UV-Vis and I-V measurements. Based on XRD analysis, the molar concentration, volume of solution and substrate temperature of the prepared NiO films were optimized as 0.20 M, 5 mL and 450 °C for P-N diode applications. The XRD pattern of the optimized NiO film revealed cubic structure. The surface morphological variations and elemental composition were confirmed by SEM and EDX analysis. The optical properties were studied with UV-Vis spectrophotometer and the minimum band gap value was 3.67 eV for 450 °C substrate temperature. Using J-V characteristics, the diode parameters: ideality factor n and barrier height Ф_b values of p-NiO/N-Si diode prepared at optimum conditions, i.e. 450 °C, 0.2 M, 5 mL, were evaluated in dark and under illumination.

Słowa kluczowe

EN

thin films; X-ray diffraction; optical properties; electrical properties

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 3
• Strony: 338--346
• Opis fizyczny: Bibliogr. 26 poz., tab., rys.

Twórcy

autor

Saju Joseph

• Research and Development Center, Bharathiar University, Coimbatore-641046, Tamilnadu, India

autor

Balasundaram O. N.

• Department of Physics, PSG College of Arts and Science, Coimbatore-641014, Tamilnadu, India

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).