Radiation-stimulated changes in the characteristics of surface-barrier AL–SI–BI structures with different concentrations of dislocations at the crystal surface

• Autorzy: Pavlyk B. , Kushlyk M. , Slobodzyan D. , Matvijishyn I. , Lys R. , Jałbrzykowski M.

Identyfikatory

DOI

10.2478/ama-2018-0012

• Języki publikacji: EN

Abstrakty

EN

We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the X-ray irradiation is accompanied by different processes which depend on the density of the dislocations in the original silicon crystals. A usual evolution of the existing structural defects and their radiationstimulated ordering dominate when the concentration remains low enough. Increase in the concentration causes the increasing role of generation of additional radiation defects. Modelling of the underlying physical processes has testified that the near-contact Si layers are strained. They act as getters for the structural defects and impurities.

Słowa kluczowe

EN

silicon; dislocations; surface-barrier structures; surface layers; radiation; reconstruction of defects

• Wydawca: Oficyna Wydawnicza Politechniki Białostockiej
• Czasopismo: Acta Mechanica et Automatica
• Rocznik: 2018
• Tom: Vol. 12, no. 1
• Strony: 72--77
• Opis fizyczny: Bibliogr. 13 poz., wykr.

Twórcy

autor

Pavlyk B.

• Faculty of Electronics, Lviv Ivan Franko National University, Drahomanova Street 50, 79005 Lviv, Ukraine

autor

Kushlyk M.

• Faculty of Electronics, Lviv Ivan Franko National University, Drahomanova Street 50, 79005 Lviv, Ukraine

autor

Slobodzyan D.

• Faculty of Electronics, Lviv Ivan Franko National University, Drahomanova Street 50, 79005 Lviv, Ukraine

autor

Matvijishyn I.

• Faculty of Electronics, Lviv Ivan Franko National University, Drahomanova Street 50, 79005 Lviv, Ukraine

autor

Lys R.

• Faculty of Electronics, Lviv Ivan Franko National University, Drahomanova Street 50, 79005 Lviv, Ukraine

autor

Jałbrzykowski M.

• Bialystok University of Technology, Faculty of Mechanical Engineering, ul. Wiejska 45C, 15-351 Bialystok, Poland

Bibliografia

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• 3. Nikolaev D.V., Antonova I.V., Naumova O.V. (2003), Charge accumulation in oxide and interface states of silicon-on-insulator structures after irradiation by electrons and γ-rays, Semiconductors, 37(4), 443-449.
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• 10. Slobodzyan D.P., Pavlyk B.V., Kushlyk M.O. (2015), Features of influence of x-radiation and magnetic field on the electrical characteristics of barrier structures based on p-si with dislocation, designed for solar energy, J. Nano- Electron. Phys., 7(4), 04051-1 - 04051-5.
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• 12. Pavlyk B.V., Slobodzyan D.P., Kushlyk M.O. (2012), Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures, Semiconductors, 46(8), 1017-1021.
• 13. Pavlyk B.V., Slobodzyan D.P., Kushlyk M.O. (2013), Electrophysical characteristics of near-surface layers in p-si crystals with sputtered al films and subjected to elastic deformation, Ukr. J. Phys., 58(8), 742-747.

Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).