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Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Thin films of manganese-doped cadmium oxide (CdO:Mn) with different Mn-doping levels (0, 1, 2, 3 and 4 at.%) were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 degrees C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1) preferential orientation. Mn-doping causes a slight shift of the (1 1 1) diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO: Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10(-4) Omega.cm.
Wydawca
Rocznik
Strony
774--781
Opis fizyczny
Bibliogr. 24 poz., rys., tab.
Twórcy
autor
  • PG and Research Department of Physics, A.V.V.M. Sri Pushpam College, Poondi-613 503, Thanjavur (Dt), Tamilnadu, India
  • PG and Research Department of Physics, A.V.V.M. Sri Pushpam College, Poondi-613 503, Thanjavur (Dt), Tamilnadu, India
  • PG and Research Department of Physics, A.V.V.M. Sri Pushpam College, Poondi-613 503, Thanjavur (Dt), Tamilnadu, India
autor
  • PG and Research Department of Physics, A.V.V.M. Sri Pushpam College, Poondi-613 503, Thanjavur (Dt), Tamilnadu, India
autor
  • PG and Research Department of Physics, A.V.V.M. Sri Pushpam College, Poondi-613 503, Thanjavur (Dt), Tamilnadu, India
Bibliografia
  • [1] Gupta R.K., Ghosh K., Patel R., Kahol P.K., Physica E, 44 (2011), 163.
  • [2] Manjula N., Usharani K., Balu A.R. Nagarethinam V.S., Int. J. ChemTech. Res., 6 (1) (2014), 705.
  • [3] Yakuphanolu F., Sol. Energy, 85 (2011), 2704.
  • [4] Usharani K., Balu A.R., Acta Metall. Sin., 4 (2015), 8.
  • [5] Ferekides C.S., Mamazza R., Balasubramanian U., Morel D.L., Thin Solid Films, 480 (2000), 8180.
  • [6] Gupta R.K., Serbetei Z., Yakuphanoglue F., J. Alloy. Compd., 515 (2012), 96.
  • [7] Dakhel A.A., Thin Solid Films, 518 (2010), 1712.
  • [8] Serbetci Z., Gupta R.K., Yakuphanoglue F., J. Sol-Gel Sci. Techn. 61 (2012), 477.
  • [9] Biasi de R.S., Grillo M.L.N., J. Alloy. Compd., 485 (2009), 26.
  • [10] Ahmad T., Khatoon S., Coolahan K., Lofland SE., J. Alloy. Compd., 558 (2013), 117.
  • [11] Sivaraman T., Balu A.R., Nagarethinam V.S., Mat. Sci. Semicon. Proc., 27 (2014), 915.
  • [12] Shanmugavel G., Balu A.R., Nagarethinam V.S., Int. J. Chem. Mat. Res., 2 (2014), 88.
  • [13] Abdolohzadeh Ziabari A., Ghodsi F.E., Kiriakidis G., Surf. Coat. Tech., 213 (2012), 15.
  • [14] Manjula N., Balu A.R., Int. J. Chem. Phys. Sci., 3 (2014), 54.
  • [15] Zheng B.J., Lian J.S., Zhao L., Jiang Q., Vacuum, 85 (2011), 861.
  • [16] Sayed El A.M., Ali Ibrahim, Mat. Sci. Semicon. Proc., 26 (2014), 320.
  • [17] Balu A.R., Nagarethinam V.S., Syed Basheer Ahamed M.G., Thayumanavan A., Murali K.R., Sanjeeviraja C., Swaminathan V., Jayachandran M., Mater. Sci. Eng. B-Adv., 171 (2010), 93.
  • [18] Mallika A.N., Ramachandra Reddy A., Sowri Babu K., Sujatha CH., Venugopal Reddy K., Opt. Mater., 36 (2014), 879.
  • [19] de Biassi R.S., Grillo M.L.N., Ceram. Int., 39 (2013), 2171.
  • [20] He R., Hocking R.K., Tsuzuki T., Mater. Chem. Phys., 132 (2012), 1035.
  • [21] Sankarasubramanian K., Soundarrajan P., Logu T., Kiruthika S., Sethuraman K., Ramesh Babu R., Ramamurthi K., Mat. Sci. Semicon. Proc., 26 (2014), 346.
  • [22] Kavasoglu N., Kavasoglur S.A., Oktik S., J. Phys. Chem. Solids, 70 (2009), 521.
  • [23] Zeng H., Duan G., Li Y., Yang S., Xu X., Cai W., Adv. Funct. Mater., 20 (2010), 561.
  • [24] Fang C.S., Gu Q.T., Wei J.Q., Pan Q.W., Shi W., Wang J.Y., J. Cryst. Growth, 209 (2000), 542.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-1f621557-e4ea-4727-ad70-32cd2792c429
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