Theoretical prediction of physical parameters of Ge x Sb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

• Autorzy: Sharma I , Maheshwari M

Identyfikatory

DOI

10.2478/s13536-014-0249-2

• Języki publikacji: EN

Abstrakty

EN

Physical properties of GexSb20−xTe80 (x = 11, 13, 15, 17, 19) bulk glassy alloys are examined theoretically. Lone pair electrons are calculated using an average coordination number (hri) and the number of valence electrons, and are found to decrease with an addition of Ge. Mean bond energy (hEi) is proportional to glass transition temperature (Tg) and shows maxima near the chemical threshold. Cohesive energy of the system is calculated using chemical bond approach. A linear relation is found between cohesive energy, band gap (calculated theoretically and confirmed experimentally) and average heat of atomization. All these parameters are increasing with an increase in Ge content. A relation between average single bond energy and photon energy is discussed. Compactness of the structure is measured from the calculated density of the glass. An attempt is made to discuss the results in terms of structure of the glass or equivalently with average coordination number.

Słowa kluczowe

EN

amorphous semiconductors; mean bond energy; glass transition temperature; cohesive energy; theoretical band gap

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2014
• Tom: Vol. 32, No. 4
• Strony: 661--668
• Opis fizyczny: Bibliogr. 29 poz., rys., tab.

Twórcy

autor

Sharma I

• Department of Physics, AIAS, Amity University, Noida, India

autor

Maheshwari M

• Department of Physics, AIAS, Amity University, Noida, India

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