UV-Vis studies of 800 keV Ar ion irradiated NiO thin films

• Autorzy: Mallick P. , Mishra D. K. , Kumar P. , Kanjilal D.

Identyfikatory

DOI

10.1515/msp-2015-0082

• Języki publikacji: EN

Abstrakty

EN

We report the evolution of optical absorption properties of 800 keV Ar ion irradiated NiO thin films through UV-Vis characterization. Our results indicate the existence of both Mott-Hubbard (d → d transition) and charge-transfer (p ! d transition) characteristic of NiO. The optical band gap of NiO increases from 3.58 to 3.75 eV when irradiated at the fluence of 5 x 10¹⁴ ions cm^-2 but it does not show any remarkable variation upon 800 keV Ar ion irradiation at higher fluences. The refractive index and electron polarizability at different ion fluences have been determined from the optical band gap. Both refractive index and electron polarizability follow an opposite trend to that of the energy gap as a function of ion fluence.

Słowa kluczowe

EN

ion irradiation; nanoparticles; UV-Vis spectroscopy; band gap

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 3
• Strony: 555--559
• Opis fizyczny: Bibliogr. 36 poz., rys., tab.

Twórcy

autor

Mallick P.

• Department of Physics, North Orissa University, Baripada 757003, Odisha, India

autor

Mishra D. K.

• Department of Physics, Institute of Technical Education and Research, Siksha ’O’ Anusandhan University, Khandagiri Square, Bhubaneswar 751030, Odisha, India
• Department of Physics, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710, South Africa

autor

Kumar P.

• Inter-University Accelerator Center, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067, Utter Pradesh, India

autor

Kanjilal D.

• Inter-University Accelerator Center, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067, Utter Pradesh, India

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