A new modeling of IGBT and Freewheeling diode based on electrical behavioral with independently of time condition

• Autorzy: Boonpeang Worawut , Santalunai Samran , Thosdeekoraphat Thanaset , Thongsopa Chanchai

Identyfikatory

DOI

10.15199/48.2020.08.02

Warianty tytułu

PL

Nowy model IGBT bazujący na diodzie typu Freewheeling z niezależnym ograniczeniem czasu

• Języki publikacji: EN

Abstrakty

EN

Several IGBT model proposed and constructed over the past years have exposed different essential qualities. However, in this paper, a new model of IGBT and Freewheeling diode based on electrical behavior is presented. The proposed parameters extraction process adopts the least squares regression and bilinear interpolation and, a two-level capacitance technique. and the model’s structure solely consists of fundamental components. In addition, the proposed model validates its simplicity for parameters extraction process, and its user-friendly application for a circuit topology of fundamental components. Some key factors of our proposed model are; independent time constraint, implementation flexibility, easily application by different topologies. These enumerated factors reinforce the reliability and suitability of our proposed model for a circuit simulation and optimization. The verification of our proposed model was steered with the use of an experimental circuit that consists of commercial components. Lastly, our simulation results showed a pattern of consistency with the experimental results.

PL

W artykule opisano nowy model IGBT wykorzystujący diodę ruchu swobodnego (freewheeling diode).Model opiera się na niezależnym, ograniczeniu czasu, elastyczności zastosowania I łatwym zastosowaniu w różnych topologiach. Przeprowadzono symulację i optymalizację modelu. Wyniki zweryfikowano eksperymentalnie.

Słowa kluczowe

EN

IGBT; Freewheeling diode; behavioral modeling; least squares regression; bilinear interpolation

PL

IGBT; Freewheele dioda; dioda ruchu swobodnego

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2020
• Tom: R. 96, nr 8
• Strony: 10--15
• Opis fizyczny: Bibliogr. 41 poz., rys., tab.

Twórcy

autor

Boonpeang Worawut

• Suranaree University of Technology, Muang Nakhon Ratchasima District, Nakhon Ratchasima, 30000, Thailand

autor

Santalunai Samran

• Suranaree University of Technology, Muang Nakhon Ratchasima District, Nakhon Ratchasima, 30000, Thailand

autor

Thosdeekoraphat Thanaset

• Suranaree University of Technology, Muang Nakhon Ratchasima District, Nakhon Ratchasima, 30000, Thailand

autor

Thongsopa Chanchai

• Suranaree University of Technology, Muang Nakhon Ratchasima District, Nakhon Ratchasima, 30000, Thailand

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).