Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

• Autorzy: Ali I. , Iqbal A. , Mahmood A. , Shah A. , Zakria M. , Ali A.

Identyfikatory

DOI

10.1515/msp-2016-0118

• Języki publikacji: EN

Abstrakty

EN

Cd_1−xZn_xSe (x = 0, 0.40 and 1) thin films were deposited on a glass substrate at room temperature by closed space sublimation method. Optical investigation has been performed using spectrophotometry and ellipsometry. It has been found that for as deposited films the optical band gap increased and the optical constants decreased with increasing Zn content. To improve the optical properties of Cd_1−xZn_xSe thin films annealing effect at 400 °C was taken into consideration for various Zn contents. It was observed that the optical transmittance and band gap decreased while optical constants increased with increasing Zn content after annealing. The effects of composition and annealing on the optical dispersion parameters E_o and E_d were investigated using a single effective oscillator model. The calculated value of the average excitation energy E_o obeys the empirical relation (E_o = E_g/2) obtained from the single oscillator model.

Słowa kluczowe

EN

thin films; optical constants; ellipsometry; Cd1−xZnxSe; optical band gap

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 4
• Strony: 828--833
• Opis fizyczny: Bibliogr. 23 poz., rys., tab.

Twórcy

autor

Ali I.

• Department of Physics, Pakistan Institute of Engineering and Applied Science (PIEAS), Islamabad Pakistan

autor

Iqbal A.

• National Institute of Lasers and Optronics (NILOP), Islamabad, Pakistan

autor

Mahmood A.

• National Institute of Lasers and Optronics (NILOP), Islamabad, Pakistan

autor

Shah A.

• National Institute of Lasers and Optronics (NILOP), Islamabad, Pakistan

autor

Zakria M.

• National Institute of Lasers and Optronics (NILOP), Islamabad, Pakistan

autor

Ali A.

• Quality Assurance Division, Pakistan Institute of Nuclear Science and Technology, Islamabad, Pakistan

Bibliografia

• [1] HANKARE P.P., CHATE P.A., ASABE M.R., DELEKAR S.D., MULLA I.S., GARADKAR K.M., J. Mater. Sci.- Mater. El., 17 (2006), 1055.
• [2] NAIR P.S., FRITZ K.P., SCHOLES G.D., Chem. Commun., 18 (2004), 2084.
• [3] VAN DE WALLE C.G., Wide-Band-Gap Semiconductors, Amsterdam, North Holland, 1993.
• [4] BRUS L.E., J. Chem. Phys., 80 (1984), 4403.
• [5] YOSHIDA T., J. Electrochem. Soc., 142 (1995), 3232.
• [6] VARTANIAN A.L., ASATRYAN A., KIRAKOSYAN L., Physica B, 389 (2007), 258.
• [7] SCHREDER B., KUKMMELL T., BACHER G., FORCHEL A., LANDWEHR G., MATERNY A., KIEFER W., J. Cryst. Growth, 214 (2000), 787.
• [8] TRAGER-COWAN C., BAGNALL D.M., MCGOW F., MCCALLUM W., O’DONNELL K.P., SMITH P.C., WRIGHT P.J., COCKAYNE B., PRIOR K.A., MULLINS J.T., HORSBURGH G., CAVENETT B.C., J. Cryst. Growth, 159 (1996), 618.
• [9] KALE R.B., LOKHANDE C.D., MANE R.S., HAN S.H., Appl. Surf. Sci., 253 (2007), 3109.
• [10] SAMARTH N., LUO H., FURDYNA J.K., ALONSO R.G., LEE Y.R., RAMDAS A.K., QADRI S.B., OTSUKA N., Appl. Phys. Lett., 56 (1990), 1163.
• [11] SUTRAVE D.S., SHAHANE G.S., PATIL V.B., DESHMUKH L.P., Mater. Chem. Phys., 65 (2000), 298.
• [12] KISHORE V., SARASWAT V.K., SAXENA N.S., SHARMA T.P., B. Mater. Sci., 28 (2005), 431.
• [13] MAHMOOD A., SHAISTA R., SHAH A., AZIZ U., AHMED E., ALI S., RAZA Q., Phys. Scr, 83 (2011).
• [14] NASER M. A., SAULI Z., HASHIM U., AL-DOURI Y., Int. J. Nanoelectron. Mater., 2 (2009), 189.
• [15] EZEMA F.I., Turk. J. Phys., 29 (2005), 105.
• [16] PANKOVE J.I., Optical Processes in Semiconductors, Dover Publications, New York, 1976.
• [17] GAEWDANG NG., GAEWDANG T., Mater. Lett., 59 (2005), 3577.
• [18] ZAKRIA M., MAHMOOD A., SHAH A., RAZA Q., KHAN T.M., AHMED E., Prog. Nat. Sci.-Mater., 22 (2012), 281.
• [19] BASSANI G.F., PARRAVICINI G.P., Electronic States and Optical Transitions in Solids, Ergamon Press, Oxford, 1989.
• [20] HANNACHI L., BOUARISSA N., Physica B, 404 (2009), 3650.
• [21] BOUARISSA N., Physica B, 399 (2007), 126.
• [22] DI DOMENICO M., WEMPLE S.H., J. Appl. Phys., 40 (1969), 720.
• [23] PRABAKAR K., VENKATACHALAM S., JEYACHANDRAN Y.L., NARAYANDASS S.K., MANGALARAJ D., Sol. Energ. Mat. Sol. C., 81 (2004), 1.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).