Study of ultrathin Co films grown on Si(111) substrates

• Autorzy: Stupakiewicz A , Fleurence A , Gieniusz R , Maziewski A , Maroutian T , Gogol P , Bartenlian B , Mégy R , Beauvillain P
• Języki publikacji: EN

Abstrakty

EN

Ultrathin Co films were grown on vicinal Si(111) substrate with Cu buffer layers. Room temperature ferromagnetic behaviour of Co layer thicker than 4 monolayers was confirmed by the magneto-optical Kerr effect. Ferromagnetic resonance measurements have proven the coexistence of the magnetocrystalline anisotropy along with the growth- and vicinal induced uniaxial out-of-plane and in-plane contributions. Multi-jump hysteresis loops were observed for selected in-plane orientations of magnetic field which is explained by the competition of different anisotropy contributions.

Słowa kluczowe

EN

magnetic anisotropy; ultrathin films; cobalt; vicinal substrate

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 4
• Strony: 1021--1026
• Opis fizyczny: Bibliogr. 15 poz., rys., wykr.

Twórcy

autor

Stupakiewicz A

• Institute of Experimental Physics, University of Białystok, Lipowa 41, 15-424 Białystok, Poland
• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Fleurence A

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Gieniusz R

• Institute of Experimental Physics, University of Białystok, Lipowa 41, 15-424 Białystok, Poland

autor

Maziewski A

• Institute of Experimental Physics, University of Białystok, Lipowa 41, 15-424 Białystok, Poland

autor

Maroutian T

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Gogol P

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Bartenlian B

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Mégy R

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

autor

Beauvillain P

• Institut d'Electronique Fondamentale,Universite Paris XI; CNRS, UMR 8622, F-91405 Orsay, France

Bibliografia

• [1] WEISS N.,CREN T., EPPLE M.,RUSPONI S.,BAUDOT G.,ROHART S., TEJEDA A.,REPAIN V.,ROUSSET S., OHRESSER P.,SCHEURER F.,BENCOK P.,BRUNE H., Phys. Rev. Lett., 95 (2005), 157204.
• [2] GAMBARDELLA P., DALLMEYER A., MAITI K., MALAGOLI M.C., EBERHARDT W., KERN K., CARBONE C., Nature 416 (2002), 301.
• [3] KAWAKAMI R.K., BOWEN M.O., CHOI H.J., ESCORCIA-APARICIO E.J., QIU Z.Q., Phys. Rev. B, 58 (1998), R5924.
• [4] HUANG F.,KIEF M.T.,MANKEY G.J.,WILLIS R.F., Phys. Rev. B, 49 (1994), 3962.
• [5] BERGER A.,LINKE U.,OEPEN H.P., Phys. Rev. Lett., 68 (1992), 839.
• [6] COUGO DOS SANTOS M., GESHEV J., PEREIRA L.G., ALVES M.C.M., SCHMIDT J.E., Phys. Rev. B, 70 (2004), 104420.
• [7] FARLE M., PLATOW W., KOSUBEK E., BABERSCHKE K., Surf. Sci., 439 (1999), 146 and references therein.
• [8] CINAL M.,UMERSKY A., Phys. Rev. B, 73 (2006), 184423.
• [9] WEI J., WANG X.-S, GOLDBERG J.L., BARTELT N.C., WILLIAMS E.D., Phys. Rev. Lett., 68 (1992), 3885.
• [10] PEDERSEN K., KRISTENSEN T.B., PEDERSER T.G., MORGEN P.,LI Z., HOFFMAN S.V., Phys. Rev. B, 66 (2002), 153406
• [11] CHEIKH-ROUHOU W., SAMPAIO L.C.,BARTENLIAN B.,BEAUVILLAIN P.,BRUN A., FERRÉ J., GEORGES P., JAMET J.P.,MATHET V.,STUPAKIEWICZ A., Appl. Phys. B, 74 (2002), 665.
• [12] RABE A.,NEMMEL N.,STELTENPOHL A.,FAUSTER TH.,Phys. Rev. Lett., 73 (1994), 2728.
• [13] PIRRI C.,PERUCHETTI J.C.,GEWINNER G., Phys. Rev. B., 29 (1984), 3391.
• [14] STUPAKIEWICZ A., GIENIUSZ R.,MAZIEWSKI A., POSTAVA K.,WAWRO A.,BACZEWSKI L.T., phys. stat. sol. (b), 243 (2006), 202.
• [15] STUPAKIEWICZ A.,MAZIEWSKI A., GOGOL P.,BEAUVILLAIN P., Physica B, 372 (2006), 354.