Impact of Protective Relays on Voltage Sag Index

• Autorzy: Gao X. , Liu Y. , Wang C.

Warianty tytułu

PL

Wpływ przekaźników ochronnych na współczynnik zapadu napięcia

• Języki publikacji: EN

Abstrakty

EN

This paper provides the probability-assessment analysis on the characteristic value of the voltage sag by using Monte Carlo stochastic modelling method to stimulate the randomness of the short circuit fault. Furthermore, this article simulates the influence of the protection devices on the voltage sag to ensure the authenticity and the referential reliability. A system with inverse-time protection devices equipped on each lines which could coordinate together are designed to cut off the short-circuit fault. The voltage sag of the designed system is evaluated by the pre-and post system average RMS variation frequency index, and the voltage sag index is compared with the ITIC curves.The simulation results demonstrated that the inverse-curve relay protection equipments are well-coordinated, and the severity and the range of the voltage sag are influenced by the cooperation of the equipped inverse time protection devices.

PL

W artykule przedstawiono metodę szacowania prawdopodobieństwa wystąpienia zapadu napięcia na podstawie analizy jego charakterystycznych parametrów zamodelowanych metodą Monte Carlo. Ponad to, w celu weryfikacji skuteczności, dokonano symulacji wpływu urządzeń ochronnych na zapady napięcia. Zaprojektowano także system z urządzeniami umożliwiającymi odizolowanie zwarcia w obwodzie od reszty sieci. Wyznaczono współczynnik częstotliwościowy zmienności wartości średniej RMS zapadów napięcia w proponowanym układzie, który następnie porównano z krzywymi ITIC. Przeprowadzone badania symulacyjne potwierdziły skuteczność i szybkość działania systemu.

Słowa kluczowe

EN

voltage sag; protective relay; algorithm; simulation

PL

zapad napięcia; algorytm Monte Carlo; symulacja

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2013
• Tom: R. 89, nr 5
• Strony: 59--62
• Opis fizyczny: Bibliogr. 18 poz., rys., tab.

Twórcy

autor

Gao X.

• School of Electronic, Information and Electrical Engineering, Shanghai Jiao Tong University
• Institute of Information Technology Luoyang Normal College

autor

Liu Y.

• Power Supply of Qingdao Company, Shandong Electric Power Corporation

autor

Wang C.

• School of foreign language, Shanghai Jiao Tong University

Bibliografia

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