FET input voltage amplifier for low frequency noise measurements

• Autorzy: Achtenberg Krzysztof , Mikołajczyk Janusz , Bielecki Zbigniew

Identyfikatory

DOI

10.24425/mms.2020.132785

• Języki publikacji: EN

Abstrakty

EN

The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp trans impedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√Hz, 3 nV/√Hz, 0.95 nV/√Hz and 0.6 nV/√Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A -3dB frequency response is from ~20 mHz to ~600 kHz.

Słowa kluczowe

EN

low noise amplifier; low frequency noise measurements; field effect transistors; FET voltage noise; FET input amplifier

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2020
• Tom: Vol. 27, nr 3
• Strony: 531--540
• Opis fizyczny: Bibliogr. 36 poz., rys., tab., wykr., wzory

Twórcy

autor

Achtenberg Krzysztof

• Military University of Technology, Institute of Optoelectronics, Gen. S. Kaliskiego 2, 00-908 Warsaw, Poland

autor

Mikołajczyk Janusz

• Military University of Technology, Institute of Optoelectronics, Gen. S. Kaliskiego 2, 00-908 Warsaw, Poland

autor

Bielecki Zbigniew

• Military University of Technology, Institute of Optoelectronics, Gen. S. Kaliskiego 2, 00-908 Warsaw, Poland

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Uwagi

EN

1. This work was prepared within the frame of grant UGB/22-786/2020/WAT.

PL

2. Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).