Hafnium dioxide effect on the electrical properties of M/n-GaN structure

• Autorzy: Ali Sadoun , Sedik Mansouri , Mohammed Chellali , Nacereddine Lakhdar , Abdelkader Hima , Zineb Benamara

Identyfikatory

DOI

10.2478/msp-2020-0020

• Języki publikacji: EN

Abstrakty

EN

In the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO₂) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO₂/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φ_b), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO2/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson (mathematical formula) equation versus (mathematical formula) have been extracted using the mentioned methods. The following values: A∗_Simul=22.65 A/cm²⋅K2, 14.29 A/cm²⋅K², 25.53 A/cm²⋅K² and 21.75 A/cm²⋅K² were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.

Słowa kluczowe

EN

Schottky diode; Pt/n-GaN; Pt/HfO2/n-GaN; Norde; Cheung; Mikhelashvili methods; Chattopadhyay methods; modified Richardson equation

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2020
• Tom: Vol. 38, No. 1
• Strony: 165--173
• Opis fizyczny: Bibliogr. 41 poz., tab., rys.

Twórcy

autor

Ali Sadoun

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

autor

Sedik Mansouri

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

autor

Mohammed Chellali

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

autor

Nacereddine Lakhdar

• University of El Oued, Fac. Technology, 39000 El Oued, Algeria

autor

Abdelkader Hima

• University of El Oued, Fac. Technology, 39000 El Oued, Algeria

autor

Zineb Benamara

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).