ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures

• Autorzy: Struk P. , Pustelny T. , Gołaszewska K. , Borysiewicz M. A. , Kamińska E. , Wojciechowski T. , Piotrowska A.

Identyfikatory

DOI

10.2478/mms-2014-0034

• Języki publikacji: EN

Abstrakty

EN

The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N₂ and O₂ atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.

Słowa kluczowe

EN

Wide band gap oxide semiconductors; ZnO; integrated optics structures; planar waveguides

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2014
• Tom: Vol. 21, nr 3
• Strony: 401--412
• Opis fizyczny: Bibliogr. 26 poz., rys., tab., wykr.

Twórcy

autor

Struk P.

• Department of Optoelectronics at the Silesian University of Technology, 2 Akademicka Str., 44-100 Gliwice, Poland ([phone])

autor

Pustelny T.

• Department of Optoelectronics at the Silesian University of Technology, 2 Akademicka Str., 44-100 Gliwice, Poland ([phone])

autor

Gołaszewska K.

• Institute of Electron Technology, 32/46 Lotnikow Al, 02-668 Warsaw, Poland ([phone])

autor

Borysiewicz M. A.

• Institute of Physics at Polish Academy of Sciences, 32/46 Lotnikow Al, 02-668 Warsaw

autor

Kamińska E.

• Institute of Electron Technology, 32/46 Lotnikow Al, 02-668 Warsaw, Poland ([phone])

autor

Wojciechowski T.

• Institute of Physics at Polish Academy of Sciences, 32/46 Lotnikow Al, 02-668 Warsaw

autor

Piotrowska A.

• Institute of Electron Technology, 32/46 Lotnikow Al, 02-668 Warsaw, Poland ([phone])

Bibliografia

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Uwagi

EN

The presented investigations were supported by the Polish National Centre for Research and Development (NCBiR) under the Structural Program WND-POIG.01.03.01-00-159/08-00.