Numerical analysis of SiGeSn/GeSn interband quantum well infrared photodetector

• Autorzy: Pareek P. , Das M. K. , Kumar S.

Identyfikatory

DOI

10.1016/j.opelre.2018.03.002

• Języki publikacji: EN

Abstrakty

EN

In this paper, detailed theoretical investigation on the frequency response and responsivity of a strain bal-anced SiGeSn/GeSn quantum well infrared photodetector (QWIP) is made. Rate equation and continuity equation in the well are solved simultaneously to obtain photo generated current. Quantum mechanical carrier transport like carrier capture in QW, escape of carrier from the well due to thermionic emission and tunneling are considered in this calculation. Impact of Sn composition in the GeSn well on the frequency response, bandwidth and responsivity are studied. Results show that Sn concentration in the GeSn active layer and applied bias have important role on the performance of the device. Significant bandwidth is obtained at low reverse bias voltage, e.g., 200 GHz is obtained at 0.28 V bias for a single Ge_0.83 Sn_0.17 layer. Whereas, the maximum responsivity is of 8.6 mA/W at 0.5 V bias for the same structure. However, this can be enhanced by using MQW structure.

Słowa kluczowe

EN

GeSn; QWIP; strain balanced; Sn composition; bandwidth; responsivity

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 2
• Strony: 149--157
• Opis fizyczny: Bibliogr. 48 poz., rys., wykr.

Twórcy

autor

Pareek P.

• Dept. of Electronics and Communication Engineering, Vaagdevi College of Engineering (Autonomous), Bollikunta, Warangal, Telengana, India
• Dept. of Electronics Engineering, Indian Institute of Technology (Indian School of Mines) Dhanbad, Dhanbad, Jharkhand, India

autor

Das M. K.

• Dept. of Electronics Engineering, Indian Institute of Technology (Indian School of Mines) Dhanbad, Dhanbad, Jharkhand, India

autor

Kumar S.

• Dept. of Electronics Engineering, Indian Institute of Technology (Indian School of Mines) Dhanbad, Dhanbad, Jharkhand, India

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Uwagi

1. This work is partly supported by the Center of Excellence in Renewable Energy, project under MHRD, Govt. of India (F. No. 5-6/2013-TS-VII) at Indian Institute of Technology (Indian School of Mines) Dhanbad, India.

2. Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).