Measurements of AlGaN/GaN heterostructures for sensor applications

• Autorzy: Hojko M R , Paszuk D , Paszkiewicz B
• Języki publikacji: EN

Abstrakty

EN

In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl) with differing pH was studied. The influence of the electrolyte pH on channel pinch-off voltage was measured using impedance spectroscopy methods. It was observed that the change of the pH of electrolyte has a strong effect on the pinch-off voltage of AlGaN/GaN HEMT-type heterostructures independently of the concentration of other ions. In high-pH environment the so-called memory effect of heterostructures was revealed. Its possible origin was discussed. A general theory to explain all results was proposed.

Słowa kluczowe

EN

sensor; AlGaN/GaN heterostructure; electrolyte; two-dimensional electron gas; 2DEG; pH

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2013
• Tom: Vol. 43, nr 1
• Strony: 35--38
• Opis fizyczny: Bibliogr. 5 poz., wykr.

Twórcy

autor

Hojko M R

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Paszuk D

autor

Paszkiewicz B

Bibliografia

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• [2] KANG B.S., WANG H.T., REN F., PEARTON S.J., Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors, Journal of Applied Physics 104(3), 2008, article 031101.
• [3] MASTURA SHAFINAZ ZAINAL ABIDIN, ABDUL MANAF HASHIM, MANEEA EIZADI SHARIFABAD, SHAHARIN FADZLI ABD RAHMAN, TAIZOH SADOH, Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure, Sensors 11(3), 2011, pp. 3067–3077.
• [4] LIBUŚ W., LIBUŚ Z., Elektrochemia, PWN, Warszawa, 1987, (in Polish).
• [5] BUDNIOK A., ŁĄGIEWKA E., Problemy elektrochemii w inżynierii materiałowej, WUŚ, Katowice, 2009, (in Polish).