Will Czochralski Growth of Sapphire Once Again Prevail?

• Autorzy: Bruni F. J. , Liu C.-M. , Stone-Sundberg J.
• Języki publikacji: EN

Abstrakty

EN

In the past decade there has been an explosive growth in the consumption of sapphire driven by the demands of the next generation of energy effcient general lighting based on GaN LEDs. This application requires orienting these rhombohedral corundum crystals such that the substrate surface is the c-plane; a basal plane defined using hexagonal axes. Sapphire crystals form a strong facet on the c-plane, and growth in that direction generally results in crystals with high defect densities, particularly dislocations, and low angle grain boundaries. To overcome this drawback, the usual methodology is to grow the crystal in the a-direction and then core drill rods perpendicularly which are then sliced into c-plane substrates. For all crystal growth techniques commonly employed for sapphire, this approach suffers from poor material utilization. Although this has generally been viewed as an acceptable trade-off in the manufacturing process as long as 200 substrates were the dominant market, as substrate diameters have increased towards 150 mm and larger, this compromise is no longer seen as a viable alternative because of the low material utilization and the high energy consumption of the growth process. This has led to a renewed look at the Czochralski process for more effcient c-axis substrate production.

Słowa kluczowe

EN

sapphire; Czochralski method

PL

szafir; metoda Czochralskiego

• Wydawca: Oficyna Wydawnicza Politechniki Warszawskiej
• Czasopismo: Zeszyty Historyczne Politechniki Warszawskiej
• Rocznik: 2014
• Tom: z. 16
• Strony: 93--98
• Opis fizyczny: Bibliogr. 16 poz., rys., wykr.

Twórcy

autor

Bruni F. J.

• Consultant, P.O. Box 2413, Santa Rosa, California, 95405, USA

autor

Liu C.-M.

• Sino-American Silicon Products Inc., Innovation Technology Research Center, No. 8, Industry E. Rd. II Hsinchu Science Park, Hsinchu 30075, Taiwan, R.O.C.

autor

Stone-Sundberg J.

• Current address: Adjunct Research Faculty, Department of Physics, Portland State University P.O. Box 751, Portland, OR 97207-0751, USA

Bibliografia

• [1] D.C. Harris, in: Proc. 10th DoD Electromagnetic Windows Symp., Norfolk, Virginia (USA), 2004.
• [2] M.S. Akselrod, F.J. Bruni, J. Cryst. Growth 360, 134 (2012).
• [3] C. Miyagawa, T. Kobayashi, T. Taishi, K. Hoshikawa, J. Cryst. Growth 372, 95 (2013).
• [4] Commencement of Mass Production of Large Sapphire Substrates, www.ledinside.com/news/ 2012/11/sumitomo_metal_mining_large_sapphire_substrates_20121116 (Accessed May 27, 2013).
• [5] H.L. Tang, H.J. Li, J. Xu, in: Advanced Topics for Crystal Growth, Ed. S.O. Ferreira, 2013, p. 321.
• [6] R.F. Belt, R.C. Puttbach, Mater. Res. Bull. 4, 403 (1969).
• [7] V.S.F. Yip, C.D. Brandle, J. Am. Ceram. Soc. 61, 8 (1978).
• [8] F. Degave, P. Ruterana, G. Nouet, J.H. Je, C.C. Kim, J. Phys. Condens. Matter 14, 13019 (2002).
• [9] L. Liu, J.H. Edgar, Mater. Sci. Eng. R 37, 61 (2002).
• [10] C.I.H. Asby, C.C. Mitchell, J. Han, N.A. Missert, P.P. Provencio, D.M. Follstaedt, G.M. Peake, L. Griego, Appl. Phys. Lett. 77, 3233 (2000).
• [11] M. Gonsalves, W. Kim, V. Narayanan, S. Mahajan, J. Cryst. Growth 240, 347 (2002).
• [12] M.J. Kappers, M.A. Moram, D.V. Sridhara Rao, C. McAleese, C.J. Humphreys, J. Cryst. Growth 312, 363 (2010).
• [13] H.J.T. Ellingham, J. Soc. Chem. Ind. 63, 125 (1944).
• [14] T.B. Reed, The Free Energy of Formation of Binary Compounds, MIT Press (1971). [Also available through the Biomass Energy Press, 2000.].
• [15] F.D. Richardson, J.H.E. Je_es, J. Iron Steel Inst.160, 261 (1948).
• [16] Yole Sapphire Market Forcast, www.i-micronews.com/upload/Rapports/Yole_Sapphire_Market_November_2011_Flyer.pdf (Accessed May 28, 2013).

Uwagi

PL

Artykuł przedrukowany z czasopisma "Acta Physica Polonica" A, 2013, Vol.124(2), pp.213-218