Zinc oxide nanoparticles for improvement of thin film photovoltaic structures’ efficiency through down shifting conversion

• Autorzy: Znajdek K. , Sibiński M. , Lisik Z. , Apostoluk A. , Zhu Y. , Masenelli B. , Sędzicki P.

Identyfikatory

DOI

10.1016/j.opelre.2017.05.005

• Języki publikacji: EN

Abstrakty

EN

The paper presents the idea to improve the performance of thin film photovoltaic cells by a light capture enhancement through the introduction of down shifting energy converters. Luminescent down shifting layers convert high-energy photons (UV light) into low-energy ones (visible light), which are more efficient in a photovoltaic conversion. For this purpose, the application of a thin layer composed of zinc oxide(ZnO) nanoparticles deposited onto a thin film solar cell is proposed. The paper presents both experimental and theoretical results of this approach. Conducted investigations include an analysis of ZnO nanoparticle layers, deposited in two independent technology methods. The results showed that ZnO nanoparticles have a great potential of application as down converting layers and can be implemented to improve the efficiency of photovoltaic cells, especially in the field of thin film PV structures. The proposed new deposition method can potentially be used in some industrial photovoltaic applications.

Słowa kluczowe

EN

zinc oxide; nanoparticles; thin film solar cells; photovoltaics; down-shifting

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2017
• Tom: Vol. 25, No. 2
• Strony: 99--102
• Opis fizyczny: Bibliogr. 20 poz., il., rys., wykr.

Twórcy

autor

Znajdek K.

• Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, 211/215 Wólczanska, 90-924 Łódź, Poland

autor

Sibiński M.

• Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, 211/215 Wólczanska, 90-924 Łódź, Poland

autor

Lisik Z.

• Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, 211/215 Wólczanska, 90-924 Łódź, Poland

autor

Apostoluk A.

• Institut des Nanotechnologies de Lyon INL CNRS-UMR5270, INSA-Lyon Villeurbanne, France

autor

Zhu Y.

• Institut des Nanotechnologies de Lyon INL CNRS-UMR5270, INSA-Lyon Villeurbanne, France

autor

Masenelli B.

• Institut des Nanotechnologies de Lyon INL CNRS-UMR5270, INSA-Lyon Villeurbanne, France

autor

Sędzicki P.

• Department of Semiconductor and Optoelectronic Devices, Lodz University of Technology, 211/215 Wólczanska, 90-924 Łódź, Poland

Bibliografia

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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)