Characteristics of ZnO thin films deposited by atomic layer deposition

• Autorzy: Boryło P. , Lukaszkowicz K. , Szindler M. , Basiaga M.
• Języki publikacji: EN

Abstrakty

EN

Purpose:The aim of this article was to examine the adhesion of ZnO thin films and the influence of temperature deposition process on their morphology. ZnO thin films have been deposited by atomic layer deposition. Design/methodology/approach: Adhesion of ZnO thin films was investigated using the scratch test method. Changes in the surface morphology were observed by scanning electron microscope (SEM). In order to confirm the chemical composition and phase investigated of thin films was carried out Energy-dispersive X-ray spectroscopy EDS and X-ray analysis. Findings: Results and their analysis have shown that the ZnO thin films deposited by ALD are uniform and homogenous. Significant impact on their morphology has the temperature of the deposition process. In the case of the adhesion temperature is negligible. Practical implications: Knowledge about the ALD ZnO thin films are possibility to obtaining a uniform thin films show that material has a big potential in optoelectronics and photovoltaic application. Originality/value: The article presents the original research results of the structure and properties of ZnO thin films deposited by ALD method, that can replace a commonly used transparent conductive layer.

Słowa kluczowe

EN

zinc oxide; atomic layer deposition; scanning electron microscopy; X-ray diffractometer; scratch test

PL

tlenek cynku; osadzanie warstw atomowych; mikroskopia skaningowa; dyfraktometr rentgenowski; test zarysowania

• Wydawca: International OCSCO World Press
• Czasopismo: Journal of Achievements in Materials and Manufacturing Engineering
• Rocznik: 2015
• Tom: Vol. 73, nr 2
• Strony: 86--91
• Opis fizyczny: Bibliogr. 16 poz., rys., tab.

Twórcy

autor

Boryło P.

• Institute of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

autor

Lukaszkowicz K.

• Institute of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

autor

Szindler M.

• Institute of Engineering Materials and Biomaterials, Silesian University of Technology, ul. Konarskiego 18a, 44-100 Gliwice, Poland

autor

Basiaga M.

• Faculty of Biomedical Engineering, Silesian University of Technology, ul. Roosevelta 40, 41-800 Zabrze, Poland

Bibliografia

• [1] N. Pinna (ed.), M. Knez (ed.), Atomic Layer Deposition of Nanostructured Materials, Wiley-VCH, Weinheim, 2012.
• [2] H. S. Nalwa (ed.), Handbook of thin film materials Vol. 1, Deposition and processing of thin films, Academic Press, San Diego, 2002.
• [3] P.M. Martin (ed.), Handbook of deposition technologies for films and coatings - science, applications and technology, Elsevier Inc., United States, 2010.
• [4] A.C. Jones, M.L. Hitchman, Chemical Vapour Deposition 'Precursors, Processes and Applications', The Royal Society of Chemistry, Great Britain, 2009.
• [5] L.A. Dobrzański, M. Szindler, Al2O3 antireflection coatings for silicon solar cells, Journal of Achievements in Materials and Manufacturing Engineering 59/1 (2013) 13-19.
• [6] LA Dobrzański, M Szindler, Sol-gel and ALD antireflection coatings for silicon solar cells, Electronic: Construction, Technology, Application 53/8 (2012) 125-127.
• [7] S.M. George, Atomic Layer Deposition: An Overview, Chemical Reviews 110/1 (2010) 111-131.
• [8] H.M. Ali, H.A. Mohamed, S.H. Mohamed, Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique; The European Physical Journal Applied Physics 31 (2005) 87-93.
• [9] M.S. Farhan, E. Zalnezhad, A.R. Bushroa, A.A.D. Sarhan, Electrical and optical properties of indium-tin oxide (ITO) films by ion-assisted deposition (IAD) at room temperature, International Journal of Precision Engineering and Manufacturing 14/8 (2013) 1465-1469.
• [10] L. Wei, C. Shuying, Photoelectric properties of ITO thin films deposited by DC magnetron sputtering, Journal of Semiconductors 32/1 (2011) 013002 (4pp).
• [11] M. Oshima, K. Yoshino, Characteristic of low resistivity fluorine-doped SnO2 thin films grown by spray pyrolysis, Japanese Journal of Applied Physics 50/5S2 (2011) 05FB15 (2pp).
• [12] M. M. Ristova, A. Gligorova, I. Nasov, D. Gracin, M. Milun, H. Kostadinova-Boskova, R. Popeski-Dimovski, TiO2 coating for SnO2: F films produced by filtered cathodic arc evaporation for improved resistance to H+Radical exposure; Journal of Electronic Materials 41/11 (2012) 3087-3094.
• [13] J.-C. Manifacier, L. Szepessy, J.F. Bresse, M. Perotin, In2O3: (Sn) and SnO2: (F) films-application to solar energy conversion part II-Electrical and optical properties, Materials Research Bulletin 14/2 (1979)163-175.
• [14] Z. Baji, Z. Lábadi, G. Molnár, B. Pécz, K. Vad, Z.E. Horváth, P.J. Szabó, T. Nagata, J. Volk, Highly conductive epitaxial ZnO layers deposited by atomic layer deposition, Thin Solid Films 562 (2014) 485-489.
• [15] T. Tynell, M. Karppinen, Atomic layer deposition of ZnO, A review, Semiconductor Science and Technology 29 (2014) 043001 (15pp).
• [16] R. Escudero, R. Escamilla, Ferromagnetic behavior of high-purity ZnO nanoparticles, Solid State Communications 151/2 (2011) 97-101.