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The High Bright Light Emitting Diodes (HBLEDs) generally having long life but very often its actual life is different from vendor’s specification. Vendors do not specify the failure criteria for their products but it may vary from 50% to 70% light output maintenance. Further time to test such a quantity takes too long under normal conditions. Longer time consumption for evaluation of such a quantity may not useful in mass production process of HBLEDs. The present study describes the determination of the useful lifetime of 1-W HBLEDs using Arrhenius Accelerated Life Test Model with the modeling parameter as the junction temperature. Failure criterion was chosen as 70% light output maintenance while two stress levels were selected as 90 °C and 110 °C and as recommended by IES LM-80-08 standard. Furthermore, forward voltage of the HBLED was used to determine junction temperature of the diode which is a critical parameter for this study. Moreover, junction temperature of the HBLED recognized as the most critical factor for degrades the lifespan. The Arrhenius Model is based on the junction temperature and activation energy parameters. The activation energy and the scaling factor were found to be 1.31 eV and 6.86×10-17 hours respectively. HBLED junction temperature under room temperature (23 °C) was found to be 55.72 °C. Finally the 70% luminary life time of 1-W HBLEDs under these conditions was found to be 8,344 hours.
Słowa kluczowe
Rocznik
Tom
Strony
48--59
Opis fizyczny
Bibliogr. 15 poz., rys., tab., wz., zdj.
Twórcy
autor
- Department of Physics, University of Colombo, Colombo 03, Sri Lanka
autor
- Department of Physics, University of Colombo, Colombo 03, Sri Lanka
Bibliografia
- [1] S. H. Lim, et al. Light and Lighting Conference with Special Emphasis on LEDs and Solid State Lighting, Budapest, 27-29 May 2009.
- [2] R. Karlicek, "High-power LED packaging." Conference on Lasers and Electro-Optics. Optical Society of America, 2005, pp 337-339.
- [3] IES Testing Procedures Committee. "IES LM-80-08, IES Approved Method for Measuring Lumen Maintenance or LED Light Sources, New York." Illuminating Engineering Society of North America (2008).
- [4] M. Ott, "Capabilities and reliability of LEDs and laser diodes." Internal NASA Parts and Packaging Publication (1996).
- [5] Y. Gu, N. Narendran, and J. P. Freyssinier, "White LED performance." Optical Science and Technology, the SPIE 49th Annual Meeting. International Society for Optics and Photonics, 2004, pp 119-124.
- [6] J. S. Jeong, J. K. Jung, and S. D. Park, "Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED." Microelectronics Reliability 48.8 (2008): 1216-1220.
- [7] C. M. Tan, et al. "Humidity effect on the degradation of packaged ultra-bright white LEDs." Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th. IEEE, 2008, pp 923-928.
- [8] T. Yanagisawa, and T. Kojima, "Long-term accelerated current operation of white lightemitting diodes." Journal of luminescence 114.1 (2005): 39-42.
- [9] E. S. Schlig, "Electrothermal considerations in display applications of light-emitting diodes." Electron Devices, IEEE Transactions on 19.7 (1972): 847-851.
- [10] N. Narendran, et al. "Long-term performance of white LEDs and systems." Proceedings of First International Conference on White LEDs and Solid State Lighting. 2007, pp 174-179.
- [11] Sematech, N. I. S. T. "Engineering statistics handbook." (2006).
- [12] K. Pommer, "Reliability Study of GaAs, 63P. 37 LED'S." Reliability Physics Symposium, 1975. 13th Annual. IEEE, 1975, pp 200-206.
- [13] L. Trevisanello, et al. "Accelerated life test of high brightness light emitting diodes." Device and Materials Reliability, IEEE Transactions on 8.2 (2008): 304-311.
- [14] E. Hong, and N. Nadarajah, "A method for projecting useful life of LED lighting systems." Optical Science and Technology, SPIE's 48th Annual Meeting. International Society for Optics and Photonics, 2004, pp 93-99.
- [15] STANDARD, Integrated Circuits Thermal Measurement Method - Electrical Test Method (Single Semiconductor Device), EIA/JESD51-1, December 1995.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-159a5767-2b39-4214-9450-6c7fe506d45e