Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer

• Autorzy: Kim Hogyoung , Won Ye Bin , Choi Byung Joon

Identyfikatory

DOI

10.24425/amm.2024.149766

• Języki publikacji: EN

Abstrakty

EN

Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the Pt/ZnO/GaN heterojunctions were electrically characterized. The analyses on the current-voltage (I-V) and capacitance (C-V) data showed that the forward I-V conduction was involved with the inhomogeneous Schottky barrier. The higher density of interface states from I-V data than that from C-V data was attributed to nonuniform distribution of interface states. In addition, high density of interface states caused localized high electric field, caused higher Poole Frenkel emission coefficients than the theoretical one.

Słowa kluczowe

EN

ZnO interlayer; GaN; inhomogeneous Schottky barrier; interface states

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2024
• Tom: Vol. 69, iss. 2
• Strony: 459--462
• Opis fizyczny: Bibliogr. 21 poz., rys., tab., wzory

Twórcy

autor

Kim Hogyoung

• Seoul National University of Science and Technology, Department of Visual Optics, Seoul 01811, Korea

• https://orcid.org/0000-0003-0066-2584

autor

Won Ye Bin

• Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea

• https://orcid.org/0000-0003-1880-4333

autor

Choi Byung Joon

• Seoul National University of Science and Technology, Department of Material Science and Engineering, Seoul 01811, Korea

• https://orcid.org/0000-0003-1920-8162

Bibliografia

• [1] M. Borysiewicz, E. Kamińska, M. Myśliwiec, M. Wzorek, A. Kuchuk, A. Barcz, E. Dynowska, M. Forte-Poisson, C. Giesen, A. Piotrowska, Fundamentals and practice of metal contacts to wide band gap semiconductor devices. Cryst. res. Technol. 47, 261 (2012). DOI: https://doi.org/10.1002/crat.201100490
• [2] F. Roccaforte, P. Fiorenza, G. Greco, R. Nigro, F. Giannazzo, F. Iucolano, M. Saggio, Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. Microelectron. Eng. 187-188, 66 (2018). DOI: https://doi.org/10.1016/j.mee.2017.11.021
• [3] S. Pearton, J. Zolper, R. Shul, F. Ren, GaN: Processing, defects, and devices. J. Appl. Phys. 86, 1 (1999). DOI: https://doi.org/10.1063/1.371145
• [4] D. Segev, C. Van de Walle, Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces. Europhys. Lett. 76, 305 (2006). DOI: https://doi.org/10.1209/epl/i2006-10250-2
• [5] S. Wahid, N. Chowdhury, Md Alam, T. Palacios, Barrier heights and Fermi level pinning in metal contacts on p-type GaN. Appl. Phys. Lett. 116, 213506 (2020). DOI: https://doi.org/10.1063/5.0010699
• [6] H. Kim, M. Jung, B. Choi, Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO2/ZnO interlayers. Phys. Scr. 97, 035805 (2022). DOI: https://doi.org/10.1088/1402-4896/ac5085
• [7] V. Janardhanam, I. Jyothi, S. Lee, V. Reddy, C. Choi, Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization. Thin Solid Films, 676, 125 (2019). DOI: https://doi.org/10.1016/j.tsf.2019.03.007
• [8] T. Tynell. M. Karppinen, Atomic layer deposition of ZnO: a review. Semicond. Sci. Technol. 29, 043001 (2014). DOI: https://doi.org/10.1088/0268-1242/29/4/043001
• [9] M. Cho, J. Go, B. Choi, Recent studies on area selective atomic layer deposition of elemental metals. J. Powder Mater. 30, 156 (2023). DOI: https://doi.org/10.4150/KPMI.2023.30.2.156
• [10] S. Jeon, S. Bang, S. Lee, S. Kwon, W. Jeong, H. Jeon, H. Chang, H. Park, Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures. J. Electrochem. Soc. 155, H738 (2008). DOI: https://doi.org/10.1149/1.2957915
• [11] J. Park, Y. Weon, M. Jung, B. Choi, Structural, electrical, and optical properties of ZnO films grown by atomic layer deposition at low temperature. Arch. Metall. Mater. 67, 1503 (2022). DOI: https://doi.org/10.24425/amm.2022.141082
• [12] D. Choi, S. Kim, J. Lee, K. Chung, J. Park, A study of thin film encapsulation on polymer substrate using low temperature hybrid ZnO/Al2O3 layers atomic layer deposition. Curr. Appl. Phys. 12, S19 (2012). DOI: https://doi.org/10.1016/j.cap.2012.02.012
• [13] R. Tung, J. Sullivan, E. Schrey, On the inhomogeneity of Schottky barriers. Mater. Sci. Eng. B 14, 266 (1992). DOI: https://doi.org/10.1016/0921-5107(92)90309-W
• [14] J. Werner, H. Gijttler, Barrier inhomogeneities at Schottky contacts. J. Appl. Phys. 69, 1522 (1991). DOI: https://doi.org/10.1063/1.347243
• [15] Q. Feng, Z. Feng, Z. Hu, X. Xing, G. Yan, J. Zhang, Y. Xu, X. Lian, Y. Hao, Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode. Appl. Phys. Lett. 112, 072103 (2018). DOI: https://doi.org/10.1063/1.5019310
• [16] S. Sze, Physics of Semiconductor devices. Wiley, New York (1981).
• [17] P. Reddy, V. Janardhanam, H. Lee, K. Shim, S. Lee, V. Reddy, C. Choi, Schottky barrier parameters and low-frequency noise characteristics of Au/Ni contact to n-Type β-Ga2O3 . J. Electron. Mater. 49, 297 (2020). DOI: https://doi.org/10.1007/s11664-019-07728-z
• [18] H. Card, E. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D: Appl. Phys. 4, 1589 (1971). DOI: https://doi.org/10.1088/0022-3727/4/10/319
• [19] J. Lin, S. Banerjee, J. Lee, C. Teng, Soft breakdown in titanium-silicided shallow source/drain junctions. IEEE Electron Dev. Lett. 11, 191 (1990). DOI: https://doi.org/10.1109/55.55246
• [20] H. Zhang, E. Miller, E. Yu, Analysis of leakage current mechanisms in Schottky contacts to gan and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy. J. Appl. Phys. 99, 023703 (2006). DOI: https://doi.org/10.1063/1.2159547
• [21] R. Gould, C. Bowler, D.C. Electrical properties of evaporated thin films of CdTe. Thin Solid Films 164, 281 (1998). DOI: https://doi.org/10.1016/0040-6090(88)90150-2

Uwagi

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT)(NRF- 2022M3F3A2A01044952).